![](http://datasheet.mmic.net.cn/Freescale-Semiconductor/MCZ33781EKR2_datasheet_98982/MCZ33781EKR2_9.png)
Analog Integrated Circuit Device Data
Freescale Semiconductor
9
33781
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions 4.75V
≤ VCC ≤ 5.25V, 9.0V ≤ VSUPn ≤ 25V,-40°C ≤ TA ≤ 90°C, unless otherwise
noted. Voltages relative to GND, unless otherwise noted. Typical values noted reflect the approximate mean values of the
parameter at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
CLOCK
Time High
Time Low
Period
tCLKHI
tCLKLO
tCLKPER
75
245
–
250
–
255
ns
Time for Low-to-High Transition of the CLK Input Signal
Time for High-to-Low Transition of the CLK Input Signal
tCLKLH
tCLKHL
–
100
ns
Reset Low Time
tRSTLO
100
–
ns
SPI INTERFACE TIMING
SPI Clock Cycle Time
tCYC
100
–
ns
SPI Clock High Time
tHI
40
–
ns
SPI Clock Low Time
tLO
40
–
ns
tLEAD
50
–
ns
tLAG
50
–
ns
SPI CS0 Time Between Bursts
(10)tCS0HI
80
–
ns
SPI CS1 Time Between Bursts
(10)tCS1HI
300
–
ns
Data Setup Time
MOSI0 Valid Before SCLK0 Rising Edge
(11)tSU
10
–
ns
Data Hold Time
tH
10
–
ns
Data Valid Time
SCLKn Falling Edge to MISOn Valid, C = 50pF
(12)tV
–
25
ns
Output Disable Time
CSn
Rise to MISOn Hi-Z
tDIS
–
50
ns
Rise Time (30% VCC to 70% VCC) SCLKn, MOSI0
tR
–
10
ns
Fall Time (70% VCC to 30% VCC)(10) SCLKn, MOSI0
tF
–
10
ns
Notes
10.
Not measured in production.
11.
SPI signal timing from the production test equipment is programmed to ensure compliance.
12.
Conditions are verified indirectly during test.