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參數(shù)資料
| 型號： | MCR12D |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | GT 10C 10#16 SKT RECP |
| 中文描述： | 12 A, 400 V, SCR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 92K |
| 代理商： | MCR12D |
Semiconductor Components Industries, LLC, 1999
December, 1999 – Rev. 2
1
Publication Order Number:
MCR12/D
Preferred Device
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave silicon gate–controlled devices are needed.
Blocking Voltage to 800 Volts
On–State Current Rating of 12 Amperes RMS at 80
°
C
High Surge Current Capability — 100 Amperes
Rugged, Economical TO220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT an IH Specified for
Ease of Design
High Immunity to dv/dt — 100 V/
μ
sec Minimum at 125
°
C
Device Marking: Logo, Device Type, e.g., MCR12D, Date Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125
°
C, Sine Wave,
50 to 60 Hz,
Gate Open)
Symbol
Value
Unit
MCR12D
MCR12M
MCR12N
VDRM,
VRRM
400
600
800
Volts
On-State RMS Current
(180
°
Conduction Angles; TC = 80
°
C)
IT(RMS)
12
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125
°
C)
ITSM
100
A
Circuit Fusing Consideration
(t = 8.33 ms)
I2t
41
A2sec
Forward Peak Gate Power
(Pulse Width
≤
1.0
μ
s, TC = 80
°
C)
PGM
5.0
Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 80
°
C)
PG(AV)
0.5
Watts
Forward Peak Gate Current
(Pulse Width
≤
1.0
μ
s, TC = 80
°
C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
–40 to
+125
°
C
Storage Temperature Range
Tstg
–40 to
+150
°
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MCR12D
TO220AB
50 Units/Rail
MCR12M
TO220AB
MCR12N
TO220AB
http://onsemi.com
50 Units/Rail
50 Units/Rail
K
G
A
TO–220AB
CASE 221A
STYLE 3
123
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCR12M | Silicon Controlled Rectifiers |
| MCR12N | Silicon Controlled Rectifiers |
| MCR225-10FP | ISOLATED SCRs 25 AMPERES RMS 600 thru 800 VOLTS |
| MCR225-8FP | ISOLATED SCRs 25 AMPERES RMS 600 thru 800 VOLTS |
| MCR649AP1 | SILICON CONTROLLED RECTIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR12DCM | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| MCR12DCMT4 | 功能描述:SCR 600V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR12DCMT4G | 功能描述:SCR 600V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR12DCMT4G | 制造商:ON Semiconductor 功能描述:SCR Thyristor |
| MCR12DCN | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Silicon Controlled Rectifiers |
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