參數(shù)資料
型號： MC-22212361F9-E85X-CD5
元件分類： 存儲器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA85
封裝： 11 X 8 MM, FBGA-85
文件頁數(shù)： 14/28頁
文件大?。?/td> 385K
代理商： MC-22212361F9-E85X-CD5
Preliminary Data Sheet M15855EJ3V0DS
21
MC-22212361-X
Read Cycle (SRAM)
Parameter
Symbol
MIN.
MAX.
Unit
Note
Read cycle time
tRC
70
ns
Address access time
tAA
70
ns
1
/CE1s access time
tCO1
70
ns
CE2s access time
tCO2
70
ns
/OE to output valid
tOE
35
ns
/LB, /UB to output valid
tBA
70
ns
Output hold from address change
tOH
5ns
/CE1s to output in Low-Z
tLZ1
5ns
2
CE2s to output in Low-Z
tLZ2
5ns
/OE to output in Low-Z
tOLZ
0ns
/LB, /UB to output in Low-Z
tBLZ
5ns
/CE1s to output in High-Z
tHZ1
25
ns
CE2s to output in High-Z
tHZ2
25
ns
/OE to output in High-Z
tOHZ
25
ns
/LB, /UB to output in High-Z
tBHZ
25
ns
Notes 1. The output load is 1TTL + 30 pF.
2. The output load is 1TTL + 5 pF.
Write Cycle (SRAM)
Parameter
Symbol
MIN.
MAX.
Unit
Note
Write cycle time
tWC
70
ns
/CE1s to end of write
tCW1
55
ns
CE2s to end of write
tCW2
55
ns
/LB, /UB to end of write
tBW
55
ns
Address valid to end of write
tAW
55
ns
Address setup time
tAS
0ns
Write pulse width
tWP
50
ns
Write recovery time
tWR
0ns
Data valid to end of write
tDW
30
ns
Data hold time
tDH
0ns
/WE to output in High-Z
tWHZ
25
ns
1
Output active from end of write
tOW
5ns
Note 1. The output load is 1TTL + 5 pF.
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