參數(shù)資料
型號(hào)： MC-22212361F9-E85X-CD5
元件分類： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA85
封裝： 11 X 8 MM, FBGA-85
文件頁數(shù)： 13/28頁
文件大?。?/td> 385K
代理商： MC-22212361F9-E85X-CD5
Preliminary Data Sheet M15855EJ3V0DS
20
MC-22212361-X
Write Cycle (Program / Erase) (Flash Memory)
(2/2)
Parameter
Symbol
-D80X
-E85X
Unit
Note
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
From completion of automatic program / erase to
tEOE
80
85
ns
data output time
RY (/BY) delay time from valid program or erase
tBUSY
80
85
ns
operation
Address setup time to /OE low in toggle bit
tASO
15
ns
Address hold time to /CEf or /OE high in toggle bit
tAHT
00
ns
/CEf pulse width high for toggle bit
tCEPH
20
ns
/OE pulse width high for toggle bit
tOEPH
20
ns
Voltage transition time
tVLHT
44
s1
Rise time to VID (/RESET)
tVIDR
500
ns
Rise time to VACC (/WP(ACC))
tVACCR
500
ns
Erase timeout time
tTOW
50
s2
Erase suspend transition time
tSPD
20
s2
Notes 1. Sector group protection only.
2. Table only.
Write operation (Program / Erase) Performance (Flash Memory)
Parameter
Description
MIN.
TYP.
MAX.
Unit
Note
Sector erase time
The preprogramming time
4K words sector
0.15
1.0
s1
prior to the erase
32K words sector
0.5
1.5
operation is not included.
4K words sector
0.5
3.0
2
32K words sector
0.7
5.0
Chip erase time
The preprogramming time prior to
65.4
205
s
1
the erase operation is not included.
96.2
678
2
Word programming time
Excludes system-level overhead
11
200
s
Chip programming time
Excludes system-level overhead
47
840
s
Accelerated programming time
Excludes system-level overhead
7
150
s
Program / Erase cycle
300,000
cycle
Notes 1. Program / erase cycle : 100,000 cycles
2. Program / erase cycle : 300,000 cycles
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