參數(shù)資料
型號(hào)： MBRF30H60CTG
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： SWITCHMODE Power Rectifiers 60V, 30A(60V, 30A開(kāi)關(guān)模式功率整流器)
中文描述： 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： LEAD FREE, PLASTIC, CASE 221D-03, TO-220, FULLPAK-3
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 115K
代理商： MBRF30H60CTG
MBRB30H60CT
1, MBR30H60CTG
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60
V
Average Rectified Forward Current
(Rated V
R
) T
C
= 159
°
C
I
F(AV)
15
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz)
I
FRM
30
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
260
A
Operating Junction Temperature (Note 1)
T
J
55 to +175
°
C
Storage Temperature
T
stg
55 to +175
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10,000
V/ s
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
W
AVAL
350
mJ
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
Junction
to
Case
Junction
to
Ambient
R
JC
R
JA
2.0
70
°
C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 15 A, T
C
= 25
°
C)
(I
F
= 15 A, T
C
= 125
°
C)
(I
F
= 30 A, T
C
= 25
°
C)
(I
F
= 30 A, T
C
= 125
°
C)
v
F
0.62
0.56
0.78
0.71
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
C
= 25
°
C)
(Rated DC Voltage, T
C
= 125
°
C)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction
to
Ambient: dP
D
/dT
J
< 1/R
JA
.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
i
R
0.3
45
mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBRF30H60CTG 制造商:ON Semiconductor 功能描述:Schottky Rectifier
MBRF30H60CTHE3/45 功能描述:肖特基二極管與整流器 60 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRF30H90CT 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High-Voltage Dual Schottky Rectifiers
MBRF30L100CT 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:30.0 AMP. Schottky Barrier Rectifiers
MBRF30L120CT 功能描述:肖特基二極管與整流器 30A,120V,DUAL LOW VF SCHOTTKY Rect,Iso RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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