參數(shù)資料
型號: MBRD5H100T4G
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: SWITCHMODE㈢ Schottky Power Rectifier
中文描述: 5 A, 100 V, SILICON, RECTIFIER DIODE
封裝: LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3
文件頁數(shù): 1/5頁
文件大?。?/td> 89K
代理商: MBRD5H100T4G
Semiconductor Components Industries, LLC, 2007
September, 2007 - Rev. 1
1
Publication Order Number:
MBRD5H100/D
MBRD5H100T4G
SWITCHMODE
Schottky Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
Features
Guardring for Stress Protection
Low Forward Voltage
175
°
C Operating Junction Temperature
Epoxy Meets UL 94 V-0 @ 0.125 in
Short Heat Sink Tab Manufactured - Not Sheared!
This is a Pb-Free Device
Mechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL 94 V-0
Weight: 0.4 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
I
F(AV)
100
V
Average Rectified Forward Current
(Rated V
R
) T
C
= 146
°
C
5
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz)
T
C
= 146
°
C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
I
FRM
10
A
I
FSM
105
A
Operating Junction and Storage
Temperature Range (Note 1)
T
J
, T
stg
-65 to +175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction-to-Ambient: dP
D
/dT
J
< 1/R
JA
.
SCHOTTKY BARRIER
RECTIFIER
5 AMPERES, 100 VOLTS
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
DPAK
CASE 369C
1 2
3
4
YWW
B
5100G
Y
WW
B5100
G
= Year
= Work Week
= Device Code
= Pb-Free Package
1
3
4
(Pin 1: No Connect)
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