參數(shù)資料
型號: MBRB2535CTL
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: SWITCHMODE Power Rectifier(開關(guān)模式功率整流器)
中文描述: 12.5 A, 35 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, CASE 418B-04, D2PAK-3
文件頁數(shù): 2/5頁
文件大?。?/td> 55K
代理商: MBRB2535CTL
MBRB2535CTL
http://onsemi.com
2
MAXIMUM RATINGS
(Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
35
V
Average Rectified Forward Current, (Rated V
R
, T
C
= 110
°
C)
I
F(AV)
12.5
A
Peak Repetitive Forward Current, (Rated V
R
, Square Wave, 20 kHz, T
C
= 90
°
C)
I
FRM
25
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
I
RRM
1.0
A
Storage Temperature Range
T
stg
65 to +150
°
C
Operating Junction Temperature
T
J
65 to +125
°
C
Voltage Rate of Change (Rated V
R
)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
(Per Leg)
dv/dt
10,000
V/ s
Characteristic
Symbol
Value
Unit
Thermal Resistance,
JunctiontoCase
JunctiontoAmbient (Note 1)
R
JC
R
JA
2.0
5.0
°
C/W
ELECTRICAL CHARACTERISTICS
(Per Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 25 Amps, T
J
= 25
°
C)
(i
F
= 12.5 Amps, T
J
= 125
°
C)
(i
F
= 12.5 Amps, T
J
= 25
°
C)
v
F
0.55
0.41
0.47
Volts
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 125
°
C)
(Rated dc Voltage, T
J
= 25
°
C)
1. When mounted using minimum recommended pad size on FR4 board.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%.
I
R
500
10
mA
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