參數(shù)資料
型號(hào): MBM30LV0064-PFTR
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 64M (8M X 8) BIT NAND-type
中文描述: 8M X 8 FLASH 3.3V PROM, 7000 ns, PDSO40
封裝: 0.80 MM PITCH, PLASTIC, REVERSE, TSOP2-44/40
文件頁(yè)數(shù): 19/43頁(yè)
文件大?。?/td> 397K
代理商: MBM30LV0064-PFTR
MBM30LV0064
19
I
ERASE AND PROGRAMMING PERFORMANCE
*1:Refer to Application Note (10) toward the end of this document.
*2:Refer to Application Note (13) toward the end of this document.
This specification is on conditions that ECC system would be combined.
I
VALID BLOCKS
The MBM30LV0064 occasionally contains unusable blocks. Refer to Application Note (12) toward the end of this
document.
I
PIN CAPACITANCE
Notes: 1. Test conditions T
A
= 25°C, f = 1.0 MHz
2. Sampled, not 100% tested.
Parameter
Symbol
Value
Unit
Remarks
Min.
Typ.
Max.
Average Programming Time
t
PROG
200
1000
μ
s
Number of Programming Cycles on Same Page
N
10
*1
Block Erasing Time
t
BERASE
2
10
ms
Number of Program/Erase Cycles
P/E
1
×
10
6
*2
Parameter
Symbol
Value
Unit
Min.
Typ.
Max.
Valid Block Number
N
VB
1014
1020
1024
Block
Parameter
Symbol
Condition
Value
Unit
Typ.
Max.
Input Capacitance
C
IN
V
IN
= 0
10
pF
Output Capacitance
C
OUT
V
OUT
= 0
10
pF
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