參數(shù)資料
型號: MBM29PL12LM10PCN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述: 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝: PLASTIC, TSOP1-56
文件頁數(shù): 62/72頁
文件大小: 1036K
代理商: MBM29PL12LM10PCN
MBM29PL12LM
10
62
555h/AAh
555h/80h
2AAh/55h
555h/AAh
555h/10h
2AAh/55h
555h/AAh
555h/80h
2AAh/55h
555h/AAh
Sector Address
/30h
Sector Address
/30h
Sector Address
/30h
2AAh/55h
Erasure Completed
Data
=
FFh
Data Polling
Write Erase
Command Sequence
(See Below)
Start
No
Yes
Embedded
Erase
Algorithm
in progress
Chip Erase Command Sequence
(Address/Command)
:
Individual Sector/Multiple Sector
Erase Command Sequence
(Address/Command)
:
Additional sector
erase commands
are optional.
EMBEDDED ALGORITHMS
Note : The sequence is applied for Word (
×
16 ) mode.
The addresses differ from Byte (
×
8 )
mode.
Embedded Erase
TM
Algorithm
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