參數(shù)資料
型號: MBM29PL12LM10PBT
廠商: Fujitsu Limited
英文描述: FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述: 快閃記憶體128米(1,600?8/8M?16)位
文件頁數(shù): 1/72頁
文件大?。?/td> 1036K
代理商: MBM29PL12LM10PBT
DS05-20914-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
128 M (16M
×
8/8M
×
16) BIT
MirrorFlash
TM
*
MBM29PL12LM
10
DESCRIPTION
The MBM29PL12LM is a 128M-bit, 3.0 V-only Flash memory organized as 16M bytes by 8 bits or 8M words by
16 bits. The MBM29PL12LM is offered in 58-pin TSOP (1) and 80-ball FBGA. The device is designed to be
programmed in-system with the standard 3.0 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write
or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
(Continued)
PRODUCT LINE UP
Note
s
:
Programming in byte mode
(
×
8
) is prohibited.
Programming to the address that already contains data is prohibited
.
(It is mandatory to erase data prior to overprogram on the same address.)
PACKAGES
* :
MirrorFlash
TM
is a trademark of Fujitsu Limited.
Part No.
MBM29PL12LM
10
3.0 V to 3.6 V
100 ns
100 ns
30 ns
V
CC
Max Address Access Time
Max CE Access Time
Max Page Read Access Time
56-pin plastic TSOP (1)
80-ball plastic FBGA
(FPT-56P-M01)
(BGA-80P-M02)
相關PDF資料
PDF描述
MBM29PL12LM10PCN FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
MBM30LV0064-PFTN 64M (8M X 8) BIT NAND-type
MBM30LV0064-PFTR 64M (8M X 8) BIT NAND-type
MBM30LV0032 32M (4M X 8) BIT NAND-type
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