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參數(shù)資料
| 型號： | MBM29DL32TF70TN |
| 廠商： | FUJITSU LTD |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | PLASTIC, TSOP1-48 |
| 文件頁數(shù)： | 33/70頁 |
| 文件大?。?/td> | 862K |
| 代理商： | MBM29DL32TF70TN |
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MBM29DL32TF/BF-70
39
unintentional writes when VCC is above VLKO.
If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector (s) cannot be used.
23. Write Pulse “Glitch” Protection
Noise pulses of less than 3 ns (typical) on OE, CE, or WE will not initiate a write cycle.
24. Logical Inhibit
Writing is inhibited by holding any one of OE
= VIL, CE = VIH, or WE = VIH. To initiate a write cycle CE and WE
must be a logic zero while OE is a logic one.
25. Power-Up Write Inhibit
Power-up of the devices with WE
= CE = VIL and OE = VIH will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to the read mode on power-up.
26. Sector Group Protection
Device user is able to protect each sector group individually to store and protect data. Protection circuit voids
both program and erase commands that are addressed to protected sectors. Any commands to program or
erase addressed to protected sector are ignored. (See “8. Sector Group Protection” in s FUNCTIONAL DE-
SCRIPTION.)
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