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參數(shù)資料
| 型號： | MBD110DWT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual Schottky Barrier Diodes |
| 中文描述： | SILICON, UHF BAND, MIXER DIODE |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-70, SC-88, 6 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 72K |
| 代理商： | MBD110DWT1G |
Semiconductor Components Industries, LLC, 2007
March, 2007 Rev. 5
1
Publication Order Number:
MBD110DWT1/D
MBD110DWT1,
MBD330DWT1,
MBD770DWT1
Preferred Device
Dual Schottky Barrier
Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small
sixleaded package. The SOT363 is ideal for lowpower surface
mount applications where board space is at a premium, such as
portable products.
Surface Mount Comparisons:
SOT363
SOT23
Area (mm
2
)
Max Package P
D
(mW)
Device Count
4.6
120
2
7.6
225
1
Space Savings:
Package
1
SOT23
2
SOT23
SOT363
40%
70%
The MBD110DW, MBD330DW, and MBD770DW devices are
spinoffs of our popular MMBD101LT1, MMBD301LT1, and
MMBD701LT1 SOT23 devices. They are designed for
highefficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
Features
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MBD110DWT1
MBD330DWT1
MBD770DWT1
V
R
7.0
30
70
V
Forward Power Dissipation T
A
= 25
°
C
P
F
120
mW
Junction Temperature
T
J
55 to +125
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
SC88 / SOT363
CASE 419B
STYLE 6
MARKING DIAGRAM
Anode 1
6 Cathode
Cathode 3
4 Anode
N/C 2
5 N/C
xx M
xx
= Device Code
Refer to Ordering Table,
page 2
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
M
1
6
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBD330DWT1G | Dual Schottky Barrier Diodes |
| MBD770DWT1G | Dual Schottky Barrier Diodes |
| MBD301G | Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes |
| MBD330DWT1 | Dual SCHOTTKY Barrier Diodes |
| MBD701G | Silicon Hot−Carrier Diodes Schottky Barrier Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBD110DWT1G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G_12 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD14 | 功能描述:ACCY MOUNT BMM 3/4" TFX RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:* |
| MBD-153-AL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
| MBD-153-KL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
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