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參數(shù)資料
| 型號： | MBD701G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Hot−Carrier Diodes Schottky Barrier Diodes |
| 中文描述： | SILICON, UHF BAND, MIXER DIODE, TO-92 |
| 封裝： | LEAD FREE, PLASTIC, CASE 182-06, TO-226AC, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 72K |
| 代理商： | MBD701G |
Semiconductor Components Industries, LLC, 2006
October, 2006 Rev. 4
1
Publication Order Number:
MBD701/D
MBD701, MMBD701LT1
Preferred Device
Silicon HotCarrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for highefficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for lowcost, highvolume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
Extremely Low Minority Carrier Lifetime 15 ps (Typ)
Very Low Capacitance 1.0 pF @ V
R
= 20 V
High Reverse Voltage to 70 V
Low Reverse Leakage 200 nA (Max)
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
70
V
Forward Power Dissipation
@ T
A
= 25
°
C
MBD701
MMBD701LT
Derate above 25
°
C
MBD701
MMBD701LT
P
F
280
200
2.8
2.0
mW
mW/
°
C
Operating Junction Temperature
Range
T
J
55 to +125
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 Adc)
V
(BR)R
70
V
Total Capacitance
(V
R
= 20 V, f = 1.0 MHz) Figure 1
C
T
0.5
1.0
pF
Reverse Leakage
(V
R
= 35 V) Figure 3
I
R
9.0
200
nAdc
Forward Voltage
(I
F
= 1.0 mAdc) Figure 4
V
F
0.42
0.5
Vdc
Forward Voltage
(I
F
= 10 mAdc) Figure 4
V
F
0.7
1.0
Vdc
http://onsemi.com
SOT23 (TO236)
CASE 318
STYLE 6
Preferred
devices are recommended choices for future use
and best overall value.
1
2
3
Device
Package
Shipping
ORDERING INFORMATION
MBD701
TO92
1,000 Units / Box
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MBD701G
TO92
(PbFree)
1,000 Units / Box
MMBD701LT1
SOT23
3,000 / Tape & Reel
MMBD701LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
1
5H M
A
Y
WW = Work Week
5H
= Device Code (SOT23)
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
= Assembly Location
= Year
MARKING
DIAGRAMS
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
TO92 2Lead
CASE 182
STYLE 1
1
2
MBD
701
AYWW
MMBD701LT3
SOT23
10,000/Tape & Reel
MMBD701LT3G
SOT23
(PbFree)
10,000/Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBD701G | 制造商:ON Semiconductor 功能描述:Small Signal Diode |
| MBD701LT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
| MBD770DWT1 | 功能描述:肖特基二極管與整流器 70V 120mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBD770DWT1G | 功能描述:肖特基二極管與整流器 70V 120mW Dual Isolated RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBD-902-AL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
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