參數(shù)資料
型號: MBD101G
廠商: ON SEMICONDUCTOR
元件分類: 射頻混頻器
英文描述: SILICON, UHF BAND, MIXER DIODE, TO-92
封裝: LEAD FREE, PLASTIC, CASE 182-06, TO-226AC, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 59K
代理商: MBD101G
MBD101, MMBD101LT1
http://onsemi.com
2
TYPICAL CHARACTERISTICS
(TA = 25°C unless noted)
Figure 1. Reverse Leakage
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
PLO, LOCAL OSCILLATOR POWER (mW)
,FOR
W
ARD
CURRENT
(mA)
I F
,REVERSE
LEAKAGE
(
A)
I R
m
0.1
0.2
0.5
2.0
1.0
10
11
3.0
0
1.0
2.0
3.0
4.0
1.0
0.9
0.8
0.7
0.6
0.3
0.4
100
0.1
30
40
50
60
70
80
100
0.1
130
110
120
90
0.07
0.05
0.02
1.0
2.0
0.5
0.6
0.7
0.01
1.0
0.7
0.5
10
1.0
Figure 5. Noise Figure Test Circuit
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
LOCAL
OSCILLATOR
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
NOISE
FIGURE METER
H.P. 342A
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — CD is measured using a capacitance bridge (Boonton
Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 — LS is measured on a package having a short instead of a
die, using an impedance bridge (Boonton Radio Model
250A RX Meter).
0.2
VR = 3.0 V
5.0
4.0
7.0
6.0
9.0
8.0
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(TEST CIRCUIT IN FIGURE 5)
5.0
TA = 25°C
TA = 40°C
TA = 85°C
NF
,NOISE
FIGURE
(dB)
C D
,CAP
ACIT
ANCE
(pF)
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