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MB95100AM Series
36
DS07-12614-5E
(Vcc
= AVcc = 5.0 V ± 10%, AVss = Vss = 0.0 V, TA = 40 °C to + 85 °C)
(Continued)
Parameter
Sym-
bol
Pin name
Conditions
Value
Unit
Remarks
Min
Typ
Max
Open-drain
output
application
voltage
VD
P50, P51,
P80 to P83
Vss
0.3
Vss
+
5.5
V
“H” level output
voltage
VOH1
Output pin other than
P00 to P07
IOH
=
4.0 mA
VCC
0.5
V
VOH2
P00 to P07
IOH
=
8.0 mA
VCC
0.5
V
“L” level output
voltage
VOL1
Output pin other than
P00 to P07, RST*3
IOL
= 4.0 mA
0.4
V
VOL2 P00 to P07
IOL
= 12 mA
0.4
V
Input leakage
current (Hi-Z
output leakage
current)
ILI
Port other than
P50, P51, P80 to P83
0.0 V < VI <
Vcc
5
+ 5
μA
When the pull-up
prohibition setting
Open-drain
output leakage
current
ILIOD
P50, P51,
P80 to P83
0.0 V < VI <
Vss
+ 5.5 V
5
μA
Pull-up resistor
RPULL
P10 to P14,P20 to P24,
P30 to P37, P40 to P43,
P52, P53, P70, P71,
PE0 to PE3, PG1*2,
PG2*2
VI
= 0.0 V
25
50
100
k
Ω
When the pull-up
permission setting
Pull-down
resistor
RMOD
MOD
VI
= Vcc
25
50
100
k
Ω
MASK ROM product
Input
capacitance
CIN
Other than AVcc, AVss,
AVR, Vcc, Vss
f
= 1 MHz
515
pF
Power supply
current*4
ICC
Vcc
(External clock
operation)
VCC
= 5.5 V
FCH
= 20 MHz
FMP
= 10 MHz
Main clock
mode
(divided by 2)
9.5
12.5
mA
Flash memory product
(At other than writing
and erasing)
30
35
mA
Flash memory product
(At writing and
erasing)
7.2
9.5
mA MASK ROM product
FCH
= 32 MHz
FMP
= 16 MHz
Main clock
mode
(divided by 2)
15.2
20.0
mA
Flash memory product
(At other than writing
and erasing)
35.7
42.5
mA
Flash memory product
(At writing and
erasing)
11.6
15.2
mA MASK ROM product