-48V Hot-Swap Controllers with External
R
SENSE
and High Gate Pulldown Current
2  _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
EE
= 0V, V
DD
= 48V, T
A
= -40癈 to +85癈, unless otherwise noted. Typical values are at T
A
= +25癈, unless otherwise noted.) (Notes 1, 4)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
All Voltages Are Referenced to V
EE
, Unless Otherwise Noted
Supply Voltage (V
DD
- V
EE
)................................-0.3V to +100V
DRAIN, PWRGD, PWRGD ....................................-0.3V to +100V
PWRGD to DRAIN .............................................& -0.3V to +95V
PWRGD to V
DD
.......................................................-95V to +85V
SENSE (Internally Clamped) .................................-0.3V to +1.0V
GATE (Internally Clamped) ....................................-0.3V to +18V
UV and OV..............................................................-0.3V to +60V
Current into SENSE...........................................................+40mA
Current into GATE...........................................................+300mA
Current into Any Other Pin................................................+20mA
Continuous Power Dissipation (T
A
= +70癈)
8-Pin SO (derate 5.9mW/癈 above +70癈)..................471mW
Operating Temperature Range ...........................-40癈 to +85癈
Junction Temperature .....................................................+150癈
Storage Temperature Range.............................-65癈 to +150癈
Lead Temperature (soldering, 10s).................................+300癈
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
NIT
POWER SUPPLIES
Operating Input Voltage Range
V
DD
20
80
V
Supply Current
I
DD
Current into V
DD
with UV = 3V, OV, DRAIN,
SENSE = V
EE
, GATE = floating
0.7
2
mA
GATE DRIVER AND CLAMPING CIRCUITS
Gate Pullup Current
I
PU
GATE drive on, V
GATE
= V
EE
-30
-45
-60
礎(chǔ)
Gate Pulldown Current
I
PD
V
SENSE
- V
EE
= 100mV, V
GATE
= 2V (Note 2)
24
50
70
mA
External Gate Drive
V
GATE
V
GATE
- V
EE
, steady state, 20V d V
DD
d 80V
10
13.5
18
V
GATE to V
EE
Clamp Voltage
V
GSCLMP
V
GATE
- V
EE
, I
GS
= 30mA
15
16.4
18
V
CIRCUIT BREAKER
Current-Limit Trip Voltage
V
CL
V
CL
= V
SENSE
- V
EE
40
50
60
mV
SENSE Input Current
I
SENSE
V
SENSE
= 50mV
-1
-0.2
0
礎(chǔ)
UNDERVOLTAGE LOCKOUT
Supply Internal Undervoltage
Lockout Voltage High
V
UVLOH
V
DD
increasing
13.8
15.4
17.0
V
Supply Internal Undervoltage
Lockout Voltage Low
V
UVLOL
V
DD
decreasing
11.8
13.4
15.0
V
UV INPUT
UV High Threshold
V
UVH
UV voltage increasing
1.240
1.255
1.270
V
UV Low Threshold
V
UVL
UV voltage decreasing
1.105
1.125
1.145
V
UV Hysteresis
V
UVHY
130
mV
UV Input Current
I
INUV
UV = V
EE
-0.5
0
礎(chǔ)
OV INPUT
OV High Threshold
V
OVH
OV voltage rising
1.235
1.255
1.275
V
OV Low Threshold
V
OVL
OV voltage decreasing
1.189
1.205
1.221
V
V V  l
R  f  r  n    H
r   i
V
OVHY
50
mV
V In
rr  n
I
V = V
-0.5
A