M
Tracking, Sinking and Sourcing, Synchronous Buck
Controller for DDR Memory and Termination Supplies
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
V+ to GND..............................................................-0.3V to +15V
EN/HSD to GND .....................................................-0.3V to +16V
VL to GND ................................................................-0.3V to +6V
PGND to GND .......................................................-0.3V to +0.3V
VTT, DDR, POK to GND ...........................................-0.3V to +6V
REF, VTTR, DL, ILIM, FSEL to GND................-0.3V to VL + 0.3V
LX to PGND............................................................-0.3V to +30V
BST to GND............................................................-0.3V to +36V
DH to LX ......................................................-0.3V to V
BST
+ 0.3V
LX to BST..................................................................-6V to +0.3V
ELECTRICAL CHARACTERISTICS
(V+ = 12V, V
EN/HSD
= V
DDR
= 2.5V, C
VL
= 4.7μF, C
VTTR
= 1μF, C
REF
= 0.22μF, V
FSEL
= 0, ILIM = VL, PGND = LX = POK = GND,
BST = VL. Specifications are for
T
A
= 0°C to +85°C
. Typical values are at T
A
= +25
°
C, unless otherwise specified.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
REF Short Circuit to GND...........................................Continuous
Continuous Power Dissipation (T
A
= +70
°
C)
16-Pin QSOP (derate up to +70
°
C)..............................667mW
16-Pin QSOP (derating above +70
°
C).....................8.3mW/
°
C
Operating Temperature Range
Extended .........................................................-40
°
C to +85
°
C
Junction Temperature......................................................+150
°
C
Storage Temperature Range.............................-65
°
C to +150
°
C
Lead Temperature (soldering 10s.).................................+300
°
C
PARAMETER
CONDITIONS
MIN
5.5
4.5
1.5
0
TYP
MAX
14.0
5.5
15.0
3.6
1.2
250
10
1.2
5
1
5
UNITS
V+ Input Voltage Range
VL = V+
Enabled
V
EN/HSD Input Voltage Range
DDR Input Voltage Range
V+ Supply Current
DDR Supply Current
EN/HSD Supply Current
VL Supply Current
V+ Shutdown Supply Current
DDR Shutdown Supply Current
VL Shutdown Supply Current
VL Undervoltage Lockout
Threshold
V
V
VTT = 2.0V
0.8
115
5
0.8
3
mA
μA
μA
mA
μA
μA
μA
VL = V+ = 5.5V, VTT = 2.0V
EN/HSD = 0V
EN/HSD = 0V
VL = V+ = 5.5V
3
Rising edge, hysteresis = 40mV
4.05
4.25
4.40
V
VTT
VTT Input Bias Current
VTT Feedback Voltage Range
V
VTT
= 2.5V
-0.1
0
49.5
49.5
0
μA
V
1.8
50.5
50.5
Overload range, V
DDR
= 1.8V
Overload range, V
DDR
= 3.6V
50
50
VTT Feedback Voltage
Accuracy
%V
DDR
REFERENCE
Reference Output Voltage
Reference Load Regulation
Reference UVLO
VTTR
VTTR Output Voltage Range
V+ = VL = 4.5V to 5.5V, I
REF
= 0
V+ = VL = 5V, I
REF
= 0 to 50μA
V+ = VL = 5V
1.98
2.00
2.02
10
1.7
V
mV
V
1.5
1.6
0
1.8
50.5
51
50.5
V
I
VTTR
= -5mA to +5mA
I
VTTR
= -25mA to +25mA, V
DDR
= 1.8V
I
VTTR
= -25mA to +25mA, V
DDR
= 3.6V
49.5
49
49.5
50
50
50
VTTR Output Accuracy
%V
DDR