參數(shù)資料
型號: MAX1717
廠商: Maxim Integrated Products, Inc.
元件分類: 數(shù)字信號處理
英文描述: Replaced by TMS320VC5506 : Digital Signal Processors 132-BQFP
中文描述: 動態(tài)可調(diào)、同步降壓型控制器,用于筆記本CPU
文件頁數(shù): 3/32頁
文件大?。?/td> 501K
代理商: MAX1717
M
Dynamically Adjustable, Synchronous
Step-Down Controller for Notebook CPUs
_______________________________________________________________________________________
3
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V+ = +15V, V
CC
= V
DD
= SKP/
SDN
= +5V, V
OUT
= 1.6V,
T
A
= 0°C to +85°C
, unless otherwise noted.)
Current-Limit Threshold
(Zero Crossing)
4
mV
GND - LX
DH Gate Driver On-Resistance
1.0
1.0
0.4
3.5
3.5
1.0
BST - LX forced to 5V
DL, high state (pull up)
DL, low state (pull down)
Current-Limit Default
Switchover Threshold
3
V
CC
- 1 V
CC
- 0.4
V
T
A
= 0°C to +85°C
ILIM = 0.5V
85
35
165
115
65
230
T
A
= +25°C to +85°C
ILIM = REF (2V)
PARAMETER
MIN
TYP
MAX
0.01
UNITS
V
μA
Output Undervoltage Fault
Blanking Time
256
clks
Output Undervoltage Fault
Propagation Delay
10
μs
Output Undervoltage Fault
Protection Threshold
65
70
75
%
Overvoltage Fault Propagation
Delay
1.5
μs
Current-Limit Threshold
(Positive, Default)
90
100
110
Current-Limit Threshold
(Positive, Adjustable)
50
200
mV
REF Sink Current
FAULT PROTECTION
Reference Load Regulation
10
Overvoltage Trip Threshold
2.20
2.25
2.30
V
Current-Limit Threshold
(Negative)
-140
-110
-80
mV
Thermal Shutdown Threshold
150
°C
V
CC
Undervoltage Lockout
Threshold
4.1
4.4
V
DL Gate Driver On-Resistance
DH Gate-Driver Source/Sink
Current
1.3
A
DL Gate-Driver Sink Current
4
A
CONDITIONS
LX - GND, ILIM = V
CC
From SKP/
SDN
signal going high, clock speed set by R
TIME
Hysteresis = 10°C
FB forced 2% below trip threshold
With respect to unloaded output voltage
FB forced 2% above trip threshold
GND - LX, ILIM = V
CC
Rising edge, hysteresis = 20mV, PWM disabled below
this level
GND - LX
DH forced to 2.5V, BST - LX forced to 5V
I
REF
= 0 to 50μA
REF in regulation
DL forced to 2.5V
Measured at FB
mV
VGATE Lower Trip Threshold
-8
-6.5
-5
%
Measured at FB with respect to unloaded output voltage,
rising edge, hysteresis = 1%
VGATE Upper Trip Threshold
+10
+12
+14
%
Measured at FB with respect to unloaded output voltage,
rising edge, hysteresis = 1%
VGATE Propagation Delay
VGATE Transition Delay
1.5
1
ms
clk
FB forced 2% outside VGATE trip threshold
After X = Y, clock speed set by R
TIME
VGATE Output Low Voltage
VGATE Leakage Current
GATE DRIVERS
0.4
1
V
I
SINK
= 1mA
High state, forced to 5.5V
μA
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