M
EEPROM-Programmable TFT VCOM Calibrator
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
V
DD
, SET, CE to GND...............................................-0.3V to +4V
OUT to GND...........................................................-0.3V to +14V
AVDD to GND.........................................................-0.3V to +24V
CTL to GND............................................................-0.3V to +16V
Continuous Power Dissipation (T
A
= +70°C) ...............................
8-Pin Thin QFN 3mm x 3mm (derate 24.4mW/°C
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 1, V
DD
= 3V, V
AVDD
= 10V, V
OUT
= 5V, R
SET
= 30.1k
,
T
A
= 0
°
C to +85
°
C
, unless otherwise noted. Typical values
are at T
A
= +25
°
C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
SINK-CURRENT ADJUSTMENT
SET Voltage Resolution
SET Differential Nonlinearity
Guaranteed monotonic
SET Zero-Scale Error
SET Full-Scale Error
SET Current
I
SET
To GND, V
AVDD
= 20V
SET External Resistance (Note 2)
R
SET
To GND, V
AVDD
= 4.5V
V
SET
/
V
AVDD
Voltage Ratio
DAC full scale
V
SET
/
V
AVDD
Factory Set Voltage
Ratio
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
above +70°C).............................................................1951mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +160°C
Lead Temperature (soldering, 10s).................................+300°C
MIN
TYP
MAX
UNITS
7
-1
-1
-12
Bits
LSB
LSB
LSB
μA
+1
+2
+12
120
200
45.00
+1
10
2.25
k
0.05
V/V
0.024
0.025
0.026
V/V
V
DD
SUPPLY
V
DD
Supply Range
V
DD
2.6
3.6
55
20
2.7
2.6
V
CE = V
DD
CE = GND
Rising edge
Falling edge
32
12
2.5
2.4
100
V
DD
Supply Current
I
DD
μA
2.2
2.1
V
DD
Power-On Reset Threshold
V
V
DD
Power-On Reset Hysteresis
CONTROL AND PROGRAMMING
CE Input Low Voltage
CE Input High Voltage
CE Startup Time
CTL High Voltage
CTL Float Voltage
CTL Low Voltage
CTL Rejected Pulse Width
CTL Minimum Pulse Width
mV
2.6V < V
DD
< 3.6V
2.6V < V
DD
< 3.6V
(Note 3)
2.6V < V
DD
< 3.6V
2.6V < V
DD
< 3.6V
2.6V < V
DD
< 3.6V
0.4
V
V
1.6
1
ms
V
V
V
μs
μs
0.70 x V
DD
0.40 x V
DD
0.20 x V
DD
20
0.82 x V
DD
0.62 x V
DD
0.32 x V
DD
200
CTL Minimum Time Between
Pulses
10
μs
CTL = GND
CTL = V
DD
-10
CTL Input Current
10
μA