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參數(shù)資料
| 型號： | MAX1512 |
| 廠商： | Maxim Integrated Products, Inc. |
| 英文描述： | EEPROM-Programmable TFT VCOM Calibrator |
| 中文描述： | EEPROM可編程TFT VCOM校準器 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大小： | 682K |
| 代理商： | MAX1512 |
M
To avoid unintentional VCOM adjustment, the MAX1512
is guaranteed to reject CTL pulses shorter than 20μs. In
addition, to avoid the possibility of a single false pulse
caused by power-up sequencing between V
DD
and
CTL, the very first pulse is ignored.
EEPROM Programming (CTL)
To program the EEPROM, apply the EEPROM program-
ming waveform through the CTL interface (Figure 7).
The control interface delivers programming power and
DAC adjustment commands on the same wire. This
1-wire approach minimizes the number of connections
from the programming circuit to the LCD panel.
To apply the EEPROM programming waveform, carefully
ramp CTL from midscale (V
DD
/ 2) to the programming
voltage, V
PP
, in 7.5ms as shown in Figure 7. If the ramp
is generated digitally, use at least 45 steps to achieve
the required 320mV ramp resolution. During the ramp
time, VCOM adjustment is disabled and the EEPROM
cells are biased in preparation for programming. After
reaching V
PP
, hold CTL at V
PP
for 1ms. During the
EFPROM program time, the EEPROM stores the DAC
setting. Next, drive CTL to ground in less than 1ms and
hold for at least 200μs. Finally, drive CTL to V
DD
/ 2 to
complete the write cycle. The EEPROM is factory set to
half scale. Follow the
EEPROM Programming Spec-
ifications
in Table 1 to guarantee reliable EEPROM pro-
gramming. Violating the specifications can damage the
EEPROM or affect data retention.
A complete evaluation kit is available to simplify evalua-
tion and production development.
EEPROM-Programmable TFT VCOM Calibrator
10
______________________________________________________________________________________
Table 1. EEPROM Programming Specifications
PARAMETER
SYMBOL
V
PP
T1
T2
T3
T4
MIN
15.25
7.0
0.9
10
200
TYP
15.5
7.5
1.0
MAX
15.75
8.0
1.1
1000
UNITS
V
ms
ms
μs
μs
CTL Programming Voltage
CTL Programming Ramp
EEPROM Program Time
V
PP
Fall Time
Done Hold Time
0
V
PP
CTL VOLTAGE
TIME
V
DD
/ 2
T1
T2
T4
T3
Figure 7. EEPROM Programming
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