參數(shù)資料
型號(hào): MAX1186ECM+TD
廠商: Maxim Integrated Products
文件頁(yè)數(shù): 16/21頁(yè)
文件大?。?/td> 0K
描述: IC ADC 10BIT 40MSPS DL 48-TQFP
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 2,000
位數(shù): 10
采樣率(每秒): 40M
數(shù)據(jù)接口: 并聯(lián)
轉(zhuǎn)換器數(shù)目: 2
功率耗散(最大): 150mW
電壓電源: 單電源
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 48-TQFP 裸露焊盤
供應(yīng)商設(shè)備封裝: 48-TQFP 裸露焊盤(7x7)
包裝: 帶卷 (TR)
輸入數(shù)目和類型: 4 個(gè)單端,雙極;2 個(gè)差分,雙極
MAX1186
Dual 10-Bit, 40Msps, 3V, Low-Power ADC with
Internal Reference and Multiplexed Parallel Outputs
4
_______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(VDD = 3V, OVDD = 2.5V, 0.1F and 1F capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through a
10k
resistor, VIN = 2VP-P (differential w.r.t. COM), CL = 10pF at digital outputs (Note 1), fCLK = 40MHz, TA = TMIN to TMAX, unless
otherwise noted. Typical values are at TA = +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Maximum REFP, COM Source
Current
ISOURCE
5
mA
Maximum REFP, COM Sink
Current
ISINK
-250
A
Maximum REFN Source Current
ISOURCE
250
A
Maximum REFN Sink Current
ISINK
-5
mA
UNBUFFERED EXTERNAL REFERENCE (VREFIN = GND, reference voltage applied to REFP, REFN, and COM)
REFP, REFN Input Resistance
RREFP,
RREFN
Measured between REFP and COM, and
REFN and COM
4k
Differential Reference Input
Voltage
VREF
VREF = VREFP - VREFN
1.024
±10%
V
COM Input Voltage
VCOM
VDD / 2
±10%
V
REFP Input Voltage
VREFP
VCOM +
VREF / 2
V
REFN Input Voltage
VREFN
VCOM -
VREF / 2
V
DIGITAL INPUTS (CLK, PD,
OE, SLEEP, T/B)
CLK
0.8
VDD
Input High Threshold
VIH
PD,
OE, SLEEP, T/B
0.8
x OVDD
V
CLK
0.2
x VDD
Input Low Threshold
VIL
PD,
OE, SLEEP, T/B
0.2
x OVDD
V
Input Hysteresis
VHYST
0.1
V
IIH
VIH = OVDD or VDD (CLK)
±5
Input Leakage
IIL
VIL = 0
±5
A
Input Capacitance
CIN
5pF
DIGITAL OUTPUTS (D0A/B–D9A/B, A/B)
Output-Voltage Low
VOL
ISINK = -200A
0.2
V
Output-Voltage High
VOH
ISOURCE = 200A
OVDD
- 0.2
V
Three-State Leakage Current
ILEAK
OE = OVDD
±10
A
Three-State Output Capacitance
COUT
OE = OVDD
5pF
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