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參數(shù)資料
| 型號(hào)： | MAAPGM0019-DIE |
| 元件分類： | 放大器 |
| 英文描述： | 9500 MHz - 13000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 2.98 X 2.98 MM, 0.075 MM HEIGHT, DIE |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 292K |
| 代理商： | MAAPGM0019-DIE |
RO-P-DS-3038 - -
2/6
1.6W X/Ku-Band Power Amplifier
MAAPGM0019-DIE
V 1.00
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Maximum Operating Conditions 1
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 8 V.
3. Adjust
VGG to set IDQ, (approximately @ –2 V).
4. Set RF input.
5. Power down sequence in reverse. Turn gate
voltage off last.
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
VDD
4.0
8.0
10.0
V
Gate Voltage
VGG
-2.5
-2.0
-1.5
V
Input Power
PIN
20.0
22.0
dBm
Junction Temperature
TJ
150
°C
MMIC Base Temperature
TB
Note 2
°C
Recommended Operating Conditions
Parameter
Symbol
Absolute Maximum
Units
Input Power
PIN
25.0
dBm
Drain Supply Voltage
VDD
+12.0
V
Gate Supply Voltage
VGG
-3.0
V
Quiescent Drain Current (No RF)
IDQ
1.33
A
Junction Temperature
TJ
180
°C
Storage Temperature
TSTG
-55 to +150
°C
Quiescent Power Dissipation (No RF)
PDISS
8.8
W
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
2. Maximum MMIC Base Temperature = 150°C — 9.1 °C/W * VDD * IDQ
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