
HMICTM Silicon Beam-Lead PIN Diodes
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2
V1
MA4PBL027
Electrical Specifications at +25 °C
Symbol
Conditions
Units
Typ.
Max.
CT
0 V, 1 MHz
2
pF
0.048
CT
-3 V, 1 MHz
2
pF
0.039
CT
-10 V, 1 MHz
2
pF
0.033
0.040
CT
-40 V, 1 MHz
2
pF
0.030
0.040
CT
0 V, 100 MHz
2,4
pF
0.043
CT
-3 V, 100 MHz
2,4
pF
0.033
CT
-10V, 100 MHz
2,4
pF
0.031
CT
-40V, 100 MHz
2,4
pF
0.027
CT
0 V, 1 GHz
2,4
pF
0.039
CT
-3 V, 1 GHz
2,4
pF
0.032
CT
-10 V, 1 GHz
2,4
pF
0.029
CT
-40 V, 1 GHz
2,4
pF
0.026
RS
10 mA, 100 MHz
3,4
3.8
RS
20 mA, 100 MHz
3,4
3.0
RS
10 mA, 1 GHz
3,4
3.5
RS
20 mA, 1 GHz
3,4
2.8
VF
20 mA
V
0.917
1.1
VR
-10
A
V
110
IR
-40 V
nA
1.0
IR
-90 V
uA
-
10.0
TL
+10 mA / -6 mA
ns
110
2. Total capacitance,
CT, is equivalent to the sum of Junction Capacitance ,Cj, and Parasitic Capacitance, Cpar.
3. Series resistance RS is equivalent to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance)
4. Rs and CT are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-186 package with conductive silver epoxy.
NOTES:
Die Handling
All semiconductor chips should be handled with care
to avoid damage or contamination from perspiration
and skin oils. The use of plastic tipped tweezers or
vacuum
pickups
is
strongly
recommended
for
individual components. Bulk handling should insure
that abrasion and mechanical shock are minimized.
Die Bonding
These devices were designed to be inserted onto
hard or soft substrates. Recommended methods of
attachment include thermocompression bonding, par-
allel-gap welding, and electrically conductive silver epoxy.
See
Application
Note
M541,
“Bonding
and
Handling Procedures for Chip Diode Devices” for
More Detailed Assembly Instructions.