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參數(shù)資料
| 型號(hào)： | MA4PBL027 |
| 元件分類： | PIN二極管 |
| 英文描述： | SILICON, PIN DIODE |
| 封裝： | CASE ODS-1302, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 309K |
| 代理商： | MA4PBL027 |
HMICTM Silicon Beam-Lead PIN Diodes
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1
V1
MA4PBL027
Features
Beam-Lead Device
No Wirebonds Required
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polymer Scratch and Impact Protection
Low Parasitic Capacitance and Inductance
Ultra Low Capacitance < 40 fF
Excellent RC Product < 0.10 pS
High Switching Cutoff Frequency > 110 GHz
110 Nanosecond Minority Carrier Lifetime
Driven by Standard +5V TTL PIN Diode Driver
Description and Applications
This device is a Silicon-Glass Beam-Lead PIN diode
fabricated with M/A-COM’s patented HMIC
TM process. This
device features one silicon pedestal embedded in a
low loss, low dispersion glass which supports the
beam-leads. The diode is formed on the top of the
pedestal, and airbridges connect the diode to the
beam-leads. The topside is fully encapsulated with
silicon nitride and has an additional polymer layer for
scratch and impact protection. These protective
coatings prevent damage to the junction and the
air-bridges during handling and assembly.
The diodes themselves exhibit low series resistance,
low capacitance, and extremely fast switching
speed.
The ultra low capacitance of this device allows use
through
W-band (110 GHz) applications. The low
RC product and low profile of the PIN diodes makes
it ideal for use in microwave and millimeter wave
switch designs, where lower insertion loss and
higher isolation are required. The + 10 mA ( low loss
state ) and the 0v ( isolation state ) bias of the
diodes allows the use a simple + 5V TTL gate driver.
These diodes are used as switching arrays on radar
systems, high-speed ECM circuits, optical switching
networks,
instrumentation,
and
other
wideband
multi-throw switch assemblies.
Case Style ODS-1302
A
B
C
D
E
F
Cathode
side
top
Dimension
Mils
mm
A
9.3 +/- 2.0
0.24 +/- 0.05
B
15.3 +/- 2.0
0.39 +/- 0.05
C
9.3 +/- 2.0
0.24 +/- 0.05
D
12.6 +/- 2.0
0.32 +/- 0.05
E
5.5 +/- 2.0
0.14 +/- 0.05
F
5.0 +/- 1.0
0.13 +/- 0.03
Absolute Maximum Ratings @ TA = +25 °C
(unless otherwise specified)
1
1. Operation of this device above any one of these parameters
may cause permanent damage.
Parameter
Maximum Rating
Operating Temperature
-55 °C to +125 °C
Storage Temperature
-55 °C to +150 °C
JunctionTemperature
+175 °C
RF C.W. Incident Power
30 dBm C.W.
RF & DC Dissipated Power
150 mW
Mounting Temperature
+235°C for 10 sec.
Forward Current
100 mA
Reverse Voltage
90 V
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