參數(shù)資料
型號： M6MGT162S2BVP
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述： 3.3的CMOS只快閃記憶體
文件頁數(shù)： 10/29頁
文件大?。?/td> 235K
代理商： M6MGT162S2BVP
Sep.1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T162S2BVP
10
DEVICE IDENTIFIER CODE
The upper data(D
15-8)
is "0".
Code
Manufacturer Code
Pins
Hex. Data
1CH
DQ
0
0
A
0
V
IL
DQ
1
0
DQ
2
1
DQ
3
1
DQ
4
1
DQ
5
DQ
6
0
DQ
7
0
Device Code (-T162S2BVP)
A0H
V
IH
0
0
1
Device Code (-B162S2BVP)
V
IH
1
0
0
1
1
0
0
0
0
0
0
0
A1H
0
1
CAPACITANCE
Symbol
Parameter
Test conditions
pF
pF
Unit
Max
8
12
Typ
Min
Limits
Ta = 25
°
C, f = 1MHz, V
in
= V
out
= 0V
Input capacitance (Address, Control Pins)
Output capacitance
Note: The value of common pins to Flash Memory is the sum of Flash Memory and SRAM.
C
IN
C
OUT
1) Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage
on input/output pins is F-V
CC
+0.5V which, during transitions, may overshoot to F-V
CC
+1.5V for periods <20ns.
ABSOLUTE MAXIMUM RATINGS
Conditions
Parameter
With respect to Ground
Symbol
F-V
cc
V
I1
T
a
T
bs
T
stg
I
OUT
All input or output voltage
Ambient temperature
Temperature under bias
Storage temperature
Output short circuit current
Flash V
cc
voltage
1)
Unit
V
V
°
C
°
C
°
C
mA
Min
-0.2
-0.6
-20
Max
4.6
4.6
85
95
125
100
-50
-65
DC ELECTRICAL CHARACTERISTICS
(Ta = -20~ 85
°
C, F-Vcc = 2.7V ~ 3.6V, unless otherwise noted)
Symbol
Parameter
Max
±
2.0
Typ1)
Limits
Min
Test conditions
Unit
F-V
CC
standby current
I
LO
I
SB1
±
11
200
Output leakage current
m
A
m
A
0V
￡
V
OUT
￡
F-V
CC
F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH
I
LI
Input leakage current
m
A
0V
￡
V
IN
￡
F-V
CC
F-V
CC
deep powerdown current
I
CC3
I
CC4
I
CC5
F-V
CC
program current
F-V
CC
erase current
F-V
CC
suspend current
mA
mA
m
A
35
35
200
F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH
F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH
Output high voltage
V
V
V
OL
V
OH1
V
OH2
V
LKO
Output low voltage
V
V
V
V
I
OL
= 4.0mA
I
OH
= –2.0mA
I
OH
= –100
m
A
0.45
F-Vcc+0.5
V
IH
Input high voltage
2.0
0.8
V
IL
Input low voltage
– 0.5
0.85(F-Vcc)
F-Vcc–0.4
1.5
Low V
CC
Lock-Out voltage 2)
2.2
F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH
I
SB2
5
F-V
CC
= 3.6V, V
IN
=GND or F-V
CC
,
F-CE# = F-RP# = F-WP# = F-V
CC
±
0.3V
F-V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, F-RP# = V
IL
F-VCC = 3.6V, VIN=GND or VCC, F-RP# =GND
±
0.3V
m
A
0.1
15
4
mA
I
CC1
F-V
CC
read current for Word or Byte
F-V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, F-CE# = V
IL
,
F-RP#=OE#=V
IH
, I
OUT
= 0mA
F-V
CC
= 3.6V,V
IN
=V
IL
/V
IH
, F-CE# =WE#= V
IL
,
F-RP#=OE#=V
IH
8
2
50
I
CC2
15
mA
F-V
CC
Write current for Word or Byte
m
A
m
A
15
5
5
I
SB3
I
SB4
0.1
5MHz
1MHz
All currents are in RMS unless otherwise noted.
1) Typical values at F-Vcc=3.3V, Ta=25
C
2) To protect against initiation of write cycle during Vcc power-up/ down, a write cycle is locked out for Vcc less than V
LKO.
If Vcc is less than V
LKO, Write State Machine is reset to read mode. When the Write State Machine is in Busy state, if Vcc is less than V
LKO
, the alteration of memory contents
may occur.
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