- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384645 > M6MGT160S2BVP (Mitsubishi Electric Corporation) CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP PDF資料下載
參數(shù)資料
| 型號： | M6MGT160S2BVP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| 中文描述： | 3.3的CMOS只快閃記憶體 |
| 文件頁數(shù)： | 3/30頁 |
| 文件大?。?/td> | 258K |
| 代理商： | M6MGT160S2BVP |
第1頁第2頁當前第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁
Sep. 1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S2BVP
3
DESCRIPTION
The Flash Memory of M6MGB/T160S2BVP is 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating
BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank
while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and
personal computing, and communication products. The Flash Memory of M6MGB/T160S2BVP is fabricated by CMOS technology for the
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells.
FEATURES
Boot Block
M6MGB160S2BVP Bottom Boot
M6MGT160S2BVP Top Boot
Other Functions
Soft Ware Command Control
Selective Block Lock
Erase Suspend/Resume
Program Suspend/Resume
Status Register Read
Alternating Back Ground Program/Erase Operation
Between Bank(I) and Bank(II)
Organization 1048,576 word x 16bit
2,097,152 word x 8 bit
Supply voltage
................................
V
CC
= 2.7~3.6V
Access time 90ns (Max.)
Power Dissipation
Read 54 mW (Max. at 5MHz)
(After Automatic Power saving) 0.33
m
W (typ.)
Program/Erase 126 mW (Max.)
Standby 0.33
m
W (typ.)
Deep power down mode 0.33
m
W (typ.)
Auto program for Bank(I)
Program Time 4ms (typ.)
Program Unit
(Byte Program) 1word/1byte
(Page Program) 128word/256byte
Auto program for Bank(II)
Program Time 4ms (typ.)
Program Unit 128word/256byte
Auto Erase
Erase time 40 ms (typ.)
Erase Unit
Bank(I) Boot Block 16Kword/32Kbyte x 1
Parameter Block 16Kword/32Kbyte x 7
Bank(II) Main Block 32Kword/64Kbyte x 28
Program/Erase cycles 100Kcycles
1. Flash Memory
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M6MGB160S2BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT160S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB160S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S2BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB162S2BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M6MGT160S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S2BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGT166S2BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| M6MGT166S4BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復。