參數(shù)資料
型號(hào)： M6MGB162S2BVP
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述： 3.3的CMOS只快閃記憶體
文件頁(yè)數(shù)： 4/29頁(yè)
文件大?。?/td> 235K
代理商： M6MGB162S2BVP
Sep.1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T162S2BVP
FUNCTION
Deep Power-Down
When F-RP# is at VIL, the device is in the deep powerdown
mode and its power consumption is substantially low. During
read modes, the memory is deselected and the data
input/output are in a high-impedance(High-Z) state. After
return from powerdown, the CUI is reset to Read Array , and
the Status Register is cleared to value 80H.
During block erase or program modes, F-RP# low will abort
either operation. Memory array data of the block being altered
become invalid.
The Flash Memory of M6MGB/T162S2BVP includes on-chip
program/erase control circuitry. The Write State Machine (WSM)
controls block erase and byte/page program operations.
Operational modes are selected by the commands written to the
Command User Interface (CUI). The Status Register indicates the
status of the WSM and when the WSM successfully completes the
desired program or block erase operation.
A Deep Powerdown mode is enabled when the F-RP# pin is at
GND, minimizing power consumption.
Read
The Flash Memory of M6MGB/T162S2BVP has three read modes,
which accesses to the memory array, the Device Identifier and the
Status Register. The appropriate read command are required to
be written to the CUI. Upon initial device powerup or after exit
from deep powerdown, the Flash Memory automatically resets to
read array mode. In the read array mode, low level input to F-CE#
and OE#, high level input to WE# and F-RP#, and address signals
to the address inputs (A19-A0) output the data of the addressed
location to the data input/output ( D15-D0).
Write
Writes to the CUI enables reading of memory array data, device
identifiers and reading and clearing of the Status Register. They
also enable block erase and program. The CUI is written by
bringing WE# to low level, while F-CE# is at low level and OE# is
at high level. Address and data are latched on the earlier rising
edge of WE# and F-CE#. Standard micro-processor write timings
are used.
Standby
When F-CE# is at VIH, the device is in the standby mode and
its power consumption is reduced. Data input/output are in a
high-impedance(High-Z) state. If the memory is deselected
during block erase or program, the internal control circuits
remain active and the device consume normal active power
until the operation completes.
Alternating Background Operation (BGO)
The Flash Memory of M6MGB/T162S2BVP allows to read array
from one bank while the other bank operates in software
command write cycling or the erasing / programming operation in
the background. Read array operation with the other bank in BGO
is performed by changing the bank address without any additional
command. When the bank address points the bank in software
command write cycling or the erasing / programming operation,
the data is read out from the status register. The access time with
BGO is the same as the normal read operation.
Output Disable
When OE# is at VIH, output from the devices is disabled. Data
input/output are in a high-impedance(High-Z) state.
Automatic Power-Saving (APS)
The Automatic Power-Saving minimizes the power
consumption during read mode. The device automatically
turns to this mode when any addresses or F-CE# isn't
changed more than 200ns after the last alternation. The
power consumption becomes the same as the stand-by
mode. While in this mode, the output data is latched and can
be read out. New data is read out correctly when addresses
are changed.
4
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參數(shù)描述
M6MGB162S4BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
M6MGB166S2BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB331S4BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
M6MGB331S8AKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
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