
EPROM/OTPROM
M68HC11E Family Data Sheet, Rev. 5.1
Freescale Semiconductor
49
2.4.3 EPROM and EEPROM Programming Control Register
The EPROM and EEPROM programming control register (PPROG) enables the EPROM programming
voltage and controls the latching of data to be programmed.
For MC68HC711E9, PPROG is also the EEPROM programming control register.
For the MC68HC711E20, EPROM programming is controlled by the EPROG register and
EEPROM programming is controlled by the PPROG register.
ODD — Program Odd Rows in Half of EEPROM (Test) Bit
Refer to
2.5 EEPROM
.
EVEN — Program Even Rows in Half of EEPROM (Test) Bit
Refer to
2.5 EEPROM
.
ELAT — EPROM/OTPROM Latch Control Bit
When ELAT = 1, writes to EPROM cause address and data to be latched and the EPROM/OTPROM
cannot be read. ELAT can be read any time. ELAT can be written any time except when EPGM = 1;
then the write to ELAT is disabled.
0 = EPROM address and data bus configured for normal reads
1 = EPROM address and data bus configured for programming
For the MC68HC711E9:
a.
EPGM enables the high voltage necessary for both EEPROM and EPROM/OTPROM
programming.
b.
ELAT and EELAT are mutually exclusive and cannot both equal 1.
BYTE — Byte/Other EEPROM Erase Mode Bit
Refer to
2.5 EEPROM
.
ROW — Row/All EEPROM Erase Mode Bit
Refer to
2.5 EEPROM
.
ERASE — Erase Mode Select Bit
Refer to
2.5 EEPROM
.
EELAT — EEPROM Latch Control Bit
Refer to
2.5 EEPROM
.
EPGM —EPROM/OTPROM/EEPROM Programming Voltage Enable Bit
EPGM can be read any time and can be written only when ELAT = 1 (for EPROM/OTPROM
programming) or when EELAT = 1 (for EEPROM programming).
0 = Programming voltage to EPROM/OTPROM/EEPROM array disconnected
1 = Programming voltage to EPROM/OTPROM/EEPROM array connected
Address: $103B
Bit 7
6
5
4
3
2
1
Bit 0
Read:
ODD
EVEN
ELAT
(1)
BYTE
ROW
ERASE
EELAT
EPGM
Write:
Reset:
0
0
0
0
0
0
0
0
1. MC68HC711E9 only
Figure 2-14. EPROM and EEPROM Programming
Control Register (PPROG)