參數(shù)資料
型號(hào)： M68AW256ML70ZH6E
廠商： STMICROELECTRONICS
元件分類： SRAM
英文描述： 256K X 16 STANDARD SRAM, 70 ns, PBGA48
封裝： 6 X 8 MM, 0.75 MM PITCH, LEAD FREE, TFBGA-48
文件頁數(shù)： 9/23頁
文件大?。?/td> 379K
代理商： M68AW256ML70ZH6E
17/23
M68AW256M
Figure 14. Low VCC Data Retention AC Waveforms
Table 9. Low VCC Data Retention Characteristics
Note: 1. All other Inputs at VIH ≥ VCC –0.2V or VIL ≤ 0.2V.
2. Tested initially and after any design or process changes that may affect these parameters. tAVAV is Read cycle time.
3. No input may exceed VCC +0.2V.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ICCDR
(1)
Supply Current (Data Retention)
VCC = 1.5V, E ≥ VCC –0.2V or
UB = LB
≥ VCC –0.2V, f = 0 (3)
4.5
9
A
tCDR
(1,2)
Chip Deselected to Data
Retention Time
0ns
tR
(2)
Operation Recovery Time
tAVAV
ns
VDR
(1)
Supply Voltage (Data Retention)
E
≥ VCC –0.2V or
UB = LB
≥ VCC –0.2V, f = 0
1.5
V
AI03989
DATA RETENTION MODE
tR
3.6V
tCDR
VCC
2.7V
VDR > 1.5V
E
≥ VDR – 0.2V or UB=LB ≥ VDR – 0.2V
E, UB/LB
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M68AW256ML70ZH6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM
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