參數(shù)資料
型號(hào): M68AW031AL70NS1U
廠(chǎng)商: STMICROELECTRONICS
元件分類(lèi): SRAM
英文描述: 32K X 8 STANDARD SRAM, 70 ns, PDSO28
封裝: 8 X 13.40 MM, PLASTIC, REVERSE, TSOP-28
文件頁(yè)數(shù): 4/21頁(yè)
文件大?。?/td> 398K
代理商: M68AW031AL70NS1U
Obsolete
Product(s)
- Obsolete
Product(s)
M68AW031A
12/21
Table 7. Read and Standby Mode AC Characteristics
Note: 1. Test conditions assume transition timing reference level = 0.3VCC or 0.7VCC.
2. At any given temperature and voltage condition, tGHQZ is less than tGLQX and tEHQZ is less than tELQX for any given device.
3. These parameters are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
4. Tested initially and after any design or process changes that may affect these parameters.
Symbol
Parameter
M68AW031A
Unit
55
70
tAVAV
Read Cycle Time
Min
55
70
ns
tAVQV
Address Valid to Output Valid
Max
55
70
ns
tAXQX
(1)
Data hold from address change
Min
5
ns
tEHQZ
(2,3)
Chip Enable High to Output Hi-Z
Max
20
25
ns
tELQV
Chip Enable Low to Output Valid
Max
55
70
ns
tELQX
(1)
Chip Enable Low to Output Transition
Min
5
ns
tGHQZ
(2,3)
Output Enable High to Output Hi-Z
Max
20
25
ns
tGLQV
Output Enable Low to Output Valid
Max
25
35
ns
tGLQX
(1)
Output Enable Low to Output Transition
Min
5
ns
tPD
(4)
Chip Enable High to Power Down
Max
55
70
ns
tPU
(4)
Chip Enable Low to Power Up
Min
0
ns
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