參數(shù)資料
型號: M5M4V4265CJ
廠商: Mitsubishi Electric Corporation
英文描述: EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
中文描述: 江戶(超頁)模式4194304位(262144字由16位)動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁數(shù): 2/31頁
文件大小: 311K
代理商: M5M4V4265CJ
EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M4V4265CJ,TP-5,-6,-7,-5S,-6S,-7S
MITSUBISHI LSIs
M5M4V4265CJ,TP-5,-5S:under development
2
FUNCTION
In addition to EDO Mode, normal read, write and read-modify-
write operations the M5M4V4265CXX provides a number of other
functions, e.g., RAS-only refresh, and delayed-write. The input
conditions for each are shown in Table 1.
BLOCK DIAGRAM
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
ADDRESS INPUTS
CLOCK GENERATOR
CIRCUIT
COLUMN DECODER
SENSE REFRESH
AMPLIFIER & I /O CONTROL
ROW
DECODER
ROW &
COLUMN
ADDRESS
BUFFER
MEMORY CELL
(4,194,304 BITS)
V
CC
(3.3V)
V
SS
(0V)
DQ
9
DQ
10
OE
DQ
16
UPPER DATA
INPUTS /
OUTPUTS
OUTPUT ENABLE
INPUT
LOWER BYTE CONTROL
COLUMN ADDRESS
STROBE INPUT
UPPER BYTE CONTROL
COLUMN ADDRESS
STROBE INPUT
ROW ADDRESS
STROBE INPUT
WRITE CONTROL
INPUT
LCAS
W
RAS
A
0
~A
8
UCAS
LOWER
UPPER
DQ
1
DQ
2
DQ
8
LOWER DATA
INPUTS /
OUTPUTS
V
CC
(3.3V)
V
SS
(0V)
V
CC
(3.3V)
V
SS
(0V)
Table 1 Input conditions for each mode
Note : ACT : active, NAC : nonactive, DNC : don' t care, OPN : open
Operation
Lower byte read
Upper byte read
Word read
Lower byte write
Upper byte write
Word write
RAS only refresh
Hidden refresh
Self refresh *
Stand-by
CAS before RAS (Extended *) refresh
RAS
ACT
ACT
ACT
ACT
ACT
ACT
ACT
ACT
LCAS
ACT
NAC
ACT
ACT
NAC
ACT
NAC
ACT
OE
ACT
ACT
ACT
NAC
NAC
NAC
DNC
ACT
Inputs
UCAS
NAC
ACT
ACT
NAC
ACT
ACT
NAC
ACT
Input/Output
W
DQ
1
~DQ
8
D
OUT
DQ
9
~DQ
16
OPN
D
OUT
NAC
DNC
NAC
NAC
NAC
ACT
ACT
ACT
DNC
NAC
DNC
DNC
OPN
D
OUT
D
IN
DNC
D
IN
OPN
D
OUT
OPN
DNC
D
IN
D
IN
OPN
D
OUT
OPN
OPN
ACT
ACT
ACT
DNC
DNC
OPN
OPN
ACT
DNC
DNC
OPN
DNC
ACT
ACT
D
OUT
A
0
~
A
8
(8)LOWER
DATA IN
BUFFER
(8)LOWER
DATA OUT
BUFFER
(8)UPPER
DATA IN
BUFFER
(8)UPPER
DATA OUT
BUFFER
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M5M4V4265CJ-5S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M4V4265CJ-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
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M5M4V4265CJ-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM