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| 型號： | M5M44405CJ-6 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM |
| 中文描述： | 江戶（超頁模式）4194304位（1048576 - Word的4位）動態(tài)隨機(jī)存儲器 |
| 文件頁數(shù)： | 7/27頁 |
| 文件大?。?/td> | 244K |
| 代理商： | M5M44405CJ-6 |
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EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
M5M44405CJ,TP-5,-6,-7,-5S,-6S,-7S
MITSUBISHI LSIs
M5M44405CJ,TP-5,-5S:Under development
Hyper page Mode Cycle
(Read, Early Write, Read-Write, Read-Modify-Write Cycle, Read Write Mix Cycle, Hi-Z control by OE or W)
(Note 25)
t
HPC
t
HPRWC
t
DOH
t
RAS
t
CP
t
CPRH
t
CPWD
t
CHOL
t
OEPE
t
WPE
t
HCWD
t
HAWD
t
HPWD
t
HCOD
t
HAOD
t
HPOD
Note 25 : All previously specified timing requirements and switching characteristics are applicable to their respective Hyper page mode cycle.
Note
26 :
t
HPC(min)
is specified in the case of read-only and early write-only in Hyper Page Mode.
Note
27 :
t
RAS(min)
is specified as two cycles of CAS input are performed.
Note
28 :
t
CP(max)
is specified as a reference point only.
M5M44405C-5,-5S M5M44405C-6,-6S M5M44405C-7,-7S
Min
Max
Min
20
25
57
66
5
5
Parameter
Symbol
Limits
Unit
Max
Min
30
79
Max
Hyper page mode read/write cycle time
Hyper Page Mode read write/read modify write cycle time
Output hold time from CAS low
RAS low pulse width for read or write cycle
CAS high pulse width
RAS hold time after CAS precharge
Delay time, CAS precharge to W low
Hold time to maintain the data Hi-Z until CAS access
OE Pulse Width (Hi-Z control)
W Pulse Width (Hi-Z control)
Delay time, CAS low to W low after read
Delay time, Address to W low after read
Delay time, CAS precharge to W low after read
Delay time, CAS low to OE high after read
Delay time, Address to OE high after read
Delay time, CAS precharge to OE high after read
(Note 26)
(Note 28)
(Note 24)
28
43
7
7
7
28
40
43
13
25
28
65
8
100000
13
33
50
7
7
7
32
47
50
15
30
33
77
10
100000
16
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
38
60
7
7
7
42
57
60
20
35
38
92
13
100000
16
5
(Note 27)
M5M44405C-5,-5S M5M44405C-6,-6S M5M44405C-7,-7S
Min
Max
Min
5
10
10
10
10
10
10
17
17
Parameter
Symbol
Limits
Unit
Max
Min
5
15
10
15
22
Max
t
CSR
t
CHR
t
RSR
t
RHR
t
CAS
CAS before RAS Refresh Cycle
(Note 29)
CAS setup time before RAS low
CAS hold time after RAS low
Read setup time before RAS low
Read hold time after RAS low
CAS low pulse width
Note 29 : Eight or more CAS before RAS cycles instead of eight RAS cycles are necessary for proper operation of CAS before RAS refresh mode.
5
ns
ns
ns
ns
ns
M5M44405C-5,-5S M5M44405C-6,-6S M5M44405C-7,-7S
Min
Max
Min
100
90
- 50
10
10
10
10
Parameter
Symbol
Limits
Unit
Max
Min
100
130
Max
Self Refresh Cycle *
(Note 30)
t
RASS
t
RPS
t
CHS
t
RSR
t
RHR
CBR self refresh RAS low pulse width
CBR self refresh RAS high precharge time
CBR self refresh CAS hold time
Read setup time before RAS low
Read hold time after RAS low
- 50
100
110
ns
ns
ns
ns
ns
- 50
10
15
7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M44405CJ-6S | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM |
| M5M44405CJ-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM |
| M5M44405CJ-7S | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM |
| M5M44405CTP-5 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM |
| M5M44405CTP-5S | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM |
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