參數(shù)資料
型號(hào)： M59MR032D120ZC6T
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述： 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù)： 21/49頁(yè)
文件大小： 352K
代理商： M59MR032D120ZC6T
M59MR032C, M59MR032D
28/49
Table 28. DC Characteristics
(TA = –40 to 85°C; VDD = VDDQ = 1.65V to 2.0V)
Note: 1. Sampled only, not 100% tested.
2. VPP may be connected to 12V power supply for a total of less than 100 hrs.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VDDQ
±1
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VDDQ
±5
A
ICC1
Supply Current
(Asynchronous Read Mode)
E = VIL, G = VIH, f = 6MHz
10
20
mA
Supply Current
(Synchronous Read Mode
Continuous Burst)
E = VIL, G = VIH, f = 40MHz
20
30
mA
ICC2
Supply Current
(Power-down)
RP = VSS ± 0.2V
210
A
ICC3
Supply Current (Standby)
E = VDD ± 0.2V
15
50
A
ICC4
(1)
Supply Current
(Program or Erase)
Word Program, Block Erase
in progress
10
20
mA
ICC5
(1)
Supply Current
(Dual Bank)
Program/Erase in progress
in one Bank, Asynchronous
Read in the other Bank
20
40
mA
Program/Erase in progress
in one Bank, Synchronous
Read in the other Bank
30
50
mA
IPP1
VPP Supply Current (Program
or Erase)
VPP = 12V ± 0.6V
510
mA
IPP2
VPP Supply Current (Standby
or Read)
VPP ≤ VCC
0.2
5
A
VPP = 12V ± 0.6V
100
400
A
VIL
Input Low Voltage
–0.5
0.4
V
VIH
Input High Voltage
VDDQ –0.4
VDDQ + 0.4
V
VOL
Output Low Voltage
IOL = 100A
0.1
V
VOH
Output High Voltage CMOS
IOH = –100A
VDDQ –0.1
V
VPP1
VPP Supply Voltage
Program, Erase
VDDQ –0.4
VDDQ + 0.4
V
VPP2
VPP Supply Voltage
Double Word Program
11.4
12.6
V
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