參數(shù)資料
型號(hào): M59MR032C120GC6T
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 32兆位的2Mb x16插槽,復(fù)用的I / O,雙行,突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù): 6/49頁(yè)
文件大小: 352K
代理商: M59MR032C120GC6T
M59MR032C, M59MR032D
14/49
Table 13. X-Latency Configuration
Note: 1. Configuration codes 5 and 6 may be used only in conjunction with configuration bit CR9 set at “1” (one data every 2 clock cycles).
Configuration Code
Input Frequency
100ns
120ns
2
25MHz
20MHz
3
40MHz
30MHz
4
54MHz
40MHz
5 (1)
66MHz
50MHz
6 (1)
60MHz
Figure 5. X-Latency Configuration Sequence
AI90113
A16-A20
VALID ADDRESS
K
L
ADQ0-ADQ15
VALID ADDRESS
VALID DATA
ADQ0-ADQ15
VALID ADDRESS
VALID DATA
ADQ0-ADQ15
VALID ADDRESS
VALID DATA
CONFIGURATION CODE 6
CONFIGURATION CODE 3
CONF. CODE 2
– Read mode (CR15). The device supports an
asynchronous page mode and a synchronous
burst mode. In asynchronous page mode, the
default at power-up, data is internally read and
stored in a buffer of 4 words selected by ADQ0
and ADQ1 address inputs. In synchronous burst
mode, the device latches the starting address
and then outputs a sequence of data which de-
pends on the configuration register settings.
– Bus Invert configuration (CR14). This regis-
ter bit is used to enable the BINV pin functional-
ity.
BINV
functionality
depends
upon
configuration bits CR14 and CR15 (see Table
12 for configuration bits definition) as shown in
Table 14.
As output pin BINV is active only when enabled
(CR14 = 1) in Read Array burst mode (CR15 = 0).
As input pin BINV is active only when enabled
(CR14 = 1). BINV is ignored when ADQ0-
ADQ15 lines are used as address inputs (ad-
dresses must not be inverted).
Table 14. BINV Configuration Bits
CR15
CR14
BINV
IN
OUT
0
0X0
0
1
Active
1
0X0
1
Active
0
相關(guān)PDF資料
PDF描述
M59MR032D120GC6T 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR064D100ZC6T 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR064C120ZC6T 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR064D120ZC6T 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59MR032C100ZC6T 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M59MR032C120ZC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59MR032CGC 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59MR032CZC 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59MR032D 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59MR032D100GC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory