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參數(shù)資料
| 型號： | M59MR032C120GC6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 14/49頁 |
| 文件大?。?/td> | 352K |
| 代理商： | M59MR032C120GC6T |
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M59MR032C, M59MR032D
Table 18. Status Register Bits (1)
Note: 1. Status Register bits do not consider BINV.
2. DQ7 and DQ2 require a valid address when reading status information.
Status
DQ7 (2)
DQ6
DQ5
DQ3
DQ2 (2)
In Progress
Program
DQ7
Toggle
0
N/A
1
Block Erase Timeout
0
Toggle
0
N/A
Block/Chip Erase
0
Toggle
0
1
N/A
Erase Suspend
Mode
Erase Suspended Block
1
0
N/A
Toggle
Non Erase Suspended Block
Automatic return to reading array data
Programming during Erase Suspend
DQ7
Toggle
0
N/A
1
Successfully/
Completed
Word Program
Automatic return to reading array data
Block/Chip Erase
Exceeded
Time Limit
Word Program
DQ7
Toggle
1
N/A
1
Block/Chip Erase
0
Toggle
1
Toggle is
failed, block is
addressed
Program in Suspend
DQ7
Toggle
1
N/A
1
POWER CONSUMPTION
Power-down
The memory provides Reset/Power-down control
input RP. The Power-down function can be acti-
vated only if the relevant Configuration Register bit
is set to ’1’. In this case, when the RP signal is
pulled at VSS the supply current drops to typically
ICC2 (see Table 28), the memory is deselected and
the outputs are in high impedance.If RP is pulled
to VSS during a Program or Erase operation, this
operation is aborted in tPLQ7V and the memory
content is no longer valid (see Reset/Power-down
input description).
Power-up
The memory Command Interface is reset on Pow-
er-up to Read Array. Either E or W must be tied to
VIH during Power-up to allow maximum security
and the possibility to write a command on the first
rising edge of W. At Power-up the device is config-
ured as:
– page mode: (CR15 = 1)
– power-down disabled: (CR10 = 0)
– BINV disabled: (CR14 = 0)
and all blocks are protected and unlocked.
Supply Rails
Normal precautions must be taken for supply volt-
age decoupling; each device in a system should
have the VDD rails decoupled with a 0.1F capac-
itor close to the VDD, VDDQ and VSS pins. The PCB
trace widths should be sufficient to carry the re-
quired VDD program and erase currents.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59MR032D120GC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064D100ZC6T | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064C120ZC6T | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064D120ZC6T | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032C100ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59MR032C120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032CGC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032D100GC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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