參數(shù)資料
型號： M58WR032FT60ZB6T
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 2M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
封裝： 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
文件頁數(shù)： 7/86頁
文件大?。?/td> 1516K
代理商： M58WR032FT60ZB6T
Obsolete
Product(s)
Product(s)
15/86
M58WR032FT, M58WR032FB
If the second bus cycle is not Write Erase Confirm
(D0h), Status Register bits SR4 and SR5 are set
and the command aborts. Erase aborts if Reset
turns to VIL. As data integrity cannot be guaran-
teed when the Erase operation is aborted, the
block must be erased again.
Once the command is issued the device outputs
the Status Register data when any address within
the bank is read. At the end of the operation the
bank will remain in Read Status Register mode un-
til a Read Array, Read CFI Query or Read Elec-
tronic Signature command is issued.
During Erase operations the bank containing the
block being erased will only accept the Read Ar-
ray, Read Status Register, Read Electronic Signa-
ture, Read CFI Query and the Program/Erase
Suspend command, all other commands will be ig-
nored. Refer to DUAL OPERATIONS AND MUL-
section
for
detailed information about simultaneous opera-
tions allowed in banks not being erased. Typical
Erase times are given in Table 14., Program/Erase
chart and Pseudo Code, for a suggested flowchart
for using the Block Erase command.
Program Command
The memory array can be programmed word-by-
word. Only one Word in one bank can be pro-
grammed at any one time. Two bus write cycles
are required to issue the Program Command.
■
The first bus cycle sets up the Program
command.
■
The second latches the Address and the Data
to be written and starts the Program/Erase
Controller.
After programming has started, read operations in
the bank being programmed output the Status
Register content.
During Program operations the bank being pro-
grammed will only accept the Read Array, Read
Status Register, Read Electronic Signature, Read
CFI Query and the Program/Erase Suspend com-
PLE BANK ARCHITECTURE section for detailed
information about simultaneous operations al-
lowed in banks not being programmed. Typical
Program times are given in Table 14., Program/
Programming aborts if Reset goes to VIL. As data
integrity cannot be guaranteed when the program
operation is aborted, the memory location must be
reprogrammed.
chart and Pseudo Code, for the flowchart for using
the Program command.
Program/Erase Suspend Command
The Program/Erase Suspend command is used to
pause a Program or Block Erase operation. A
Bank Erase operation cannot be suspended.
One bus write cycle is required to issue the Pro-
gram/Erase command. Once the Program/Erase
Controller has paused bits SR7, SR6 and/ or SR2
of the Status Register will be set to ‘1’. The com-
mand can be addressed to any bank.
During Program/Erase Suspend the Command In-
terface will accept the Program/Erase Resume,
Read Array (cannot read the erase-suspended
block or the program-suspended Word), Read
Status Register, Read Electronic Signature and
Read CFI Query commands. Additionally, if the
suspend operation was Erase then the Clear sta-
tus Register, Program, Block Lock, Block Lock-
Down or Block Unlock commands will also be ac-
cepted. The block being erased may be protected
by issuing the Block Lock, Block Lock-Down or
Protection Register Program commands. Only the
blocks not being erased may be read or pro-
grammed correctly. When the Program/Erase Re-
sume command is issued the operation will
complete. Refer to the DUAL OPERATIONS AND
detailed information about simultaneous opera-
tions allowed during Program/Erase Suspend.
During a Program/Erase Suspend, the device can
be placed in standby mode by taking Chip Enable
to VIH. Program/Erase is aborted if Reset turns to
VIL.
Pseudo Code, for flowcharts for using the Pro-
gram/Erase Suspend command.
Program/Erase Resume Command
The Program/Erase Resume command can be
used to restart the Program/Erase Controller after
a Program/Erase Suspend command has paused
it. One Bus Write cycle is required to issue the
command. The command can be written to any
address.
The Program/Erase Resume command does not
change the read mode of the banks. If the sus-
pended bank was in Read Status Register, Read
Electronic signature or Read CFI Query mode the
bank remains in that mode and outputs the corre-
sponding data. If the bank was in Read Array
mode subsequent read operations will output in-
valid data.
If a Program command is issued during a Block
Erase Suspend, then the erase cannot be re-
sumed until the programming operation has com-
pleted. It is possible to accumulate suspend
operations. For example: suspend an erase oper-
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M58WR032FT70ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT70ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT70ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT80ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
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