參數(shù)資料
型號(hào)： M58WR032FT60ZB6T
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 2M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
封裝： 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
文件頁(yè)數(shù)： 46/86頁(yè)
文件大?。?/td> 1516K
代理商： M58WR032FT60ZB6T
Obsolete
Product(s)
- Obsolete
Product(s)
M58WR032FT, M58WR032FB
50/86
Table 22. Write AC Characteristics, Write Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. tWHEL has the values shown when reading in the targeted bank. System designers should take this into account and may insert a
software No-Op instruction to delay the first read in the same bank after issuing a command. If it is a Read Array operation in a
different bank tWHEL is 0ns.
3. Meaningful only if L is always kept low.
Symbol
Alt
Parameter
M58WR032FT/B
Unit
60
70
80
Write
E
n
a
b
le
C
o
n
tro
lled
T
im
ing
s
tAVAV
tWC
Address Valid to Next Address Valid
Min
60
70
80
ns
tAVLH
Address Valid to Latch Enable High
Min
7
9
ns
tAVWH
(3)
Address Valid to Write Enable High
Min
40
45
50
ns
tDVWH
tDS
Data Valid to Write Enable High
Min
40
45
50
ns
tELLH
Chip Enable Low to Latch Enable High
Min
10
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
Min
0
ns
tELQV
Chip Enable Low to Output Valid
Min
60
70
80
ns
tELKV
Chip Enable Low to Clock Valid
Min
7
9
ns
tGHWL
Output Enable High to Write Enable Low
Min
14
17
ns
tLHAX
Latch Enable High to Address Transition
Min
7
9
ns
tLLLH
Latch Enable Pulse Width
Min
7
9
ns
tWHAV
(3)
Write Enable High to Address Valid
Min
0
ns
tWHAX
(3)
tAH
Write Enable High to Address Transition
Min
0
ns
tWHDX
tDH
Write Enable High to Input Transition
Min
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
Min
0
ns
tWHEL
(2)
Write Enable High to Chip Enable Low
Min
20
25
ns
tWHGL
Write Enable High to Output Enable Low
Min
0
ns
tWHLL
Write Enable High to Latch Enable Low
Min
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
Min
20
25
ns
tWHQV
Write Enable High to Output Valid
Min
80
95
105
ns
tWLWH
tWP
Write Enable Low to Write Enable High
Min
40
45
50
ns
P
rot
ec
tion
T
im
ing
s
tQVVPL
Output (Status Register) Valid to VPP Low
Min
000
ns
tQVWPL
Output (Status Register) Valid to Write Protect
Low
Min
000
ns
tVPHWH
tVPS
VPP High to Write Enable High
Min
200
ns
tWHVPL
Write Enable High to VPP Low
Min
200
ns
tWHWPL
Write Enable High to Write Protect Low
Min
200
ns
tWPHWH
Write Protect High to Write Enable High
Min
200
ns
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參數(shù)描述
M58WR032FT70ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT70ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT70ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
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