參數(shù)資料
型號： M58LT128GST
廠商： 意法半導(dǎo)體
英文描述： 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述： 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存
文件頁數(shù)： 1/98頁
文件大?。?/td> 693K
代理商： M58LT128GST
PRELIMINARY DATA
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Rev 1.0
1/98
September 2005
1
M58LT128GST
M58LT128GSB
128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst)
1.8V Supply Secure Flash Memories
Features Summary
■
SUPPLY VOLTAGE
– V
DD
= 1.7 to 2.0V for program, erase and
read
– V
DDQ
= 2.7 to 3.6V for I/O Buffers
– V
PP
= 9V for fast program
■
SYNCHRONOUS / ASYNCHRONOUS READ
– Random Access: 110ns
– Asynchronous Page Read: 25ns.
– Synchronous Burst Read: 52MHz
■
SYNCHRONOUS BURST READ SUSPEND
■
PROGRAMMING TIME
– 10μs typical Word program time using
Buffer Enhanced Factory Program
command
■
MEMORY ORGANIZATION
– Multiple Bank Memory Array:
8 Mbit Banks
– Parameter Blocks (Top or Bottom location)
■
DUAL OPERATIONS
– program/erase in one Bank while read in
others
– No delay between read and write
operations
■
HARDWARE PROTECTION
– All Blocks Write Protected when V
PP
≤
V
PPLK
■
SECURITY
– Software Security Features
– 64-bit Unique Device Identifier
– 2112 bits of User-Programmable OTP
memory
■
COMMON FLASH INTERFACE (CFI)
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
■
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code:
M58LT128GST: 88C6h
M58LT128GSB: 88C7h
■
ECOPACK
PACKAGE AVAILABLE
BGA
TBGA64 (ZA)
10 x 13mm
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