- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359080 > M58LT128GST1ZA5 (意法半導體) 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories PDF資料下載
參數(shù)資料
| 型號： | M58LT128GST1ZA5 |
| 廠商： | 意法半導體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 28/98頁 |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GST1ZA5 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁當前第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁
4 Command Interface
M58LT128GST, M58LT128GSB
28/98
Table 6.
Factory Program Command
Table 7.
Electronic Signature Codes
Command
Phase
C
Bus Write Operations
(1)
1.
WA=Word Address in targeted bank, BKA= Bank Address, PD=Program Data, BA=Block Address, X = Don’t Care.
1st
2nd
3rd
Final -1
Final
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Buffer
Enhanced
Factory
Program
Setup
2
BKA or
WA
(2)
2.
Any address within the bank can be used.
80h
WA
1
D0h
Program/
Verify
(3)
3.
The Program/Verify phase can be executed any number of times as long as the data is to be programmed to the same
block.
≥
32
WA
1
PD
1
WA
1
PD
2
WA
1
PD
3
WA
1
PD
31
WA
1
PD
32
Exit
1
NOT
BA
1(4)
4.
WA
1
is the Start Address, NOT BA
1
= Not Block Address of WA
1
.
X
Code
Address (h)
Data (h)
Manufacturer Code
Bank Address + 00
0020
Device Code
Top
Bank Address + 01
88C6h (M58LT128GST)
Bottom
Bank Address + 01
88C7h (M58LT128GSB)
Die Revision Code
Block Address + 03
DRC
(1)
1.
CR = Configuration Register, DRC = Die Revision Code.
Configuration Register
Bank Address + 05
CR
(1)
Protection
Register PR0
ST Factory Default
Bank Address + 80
bit 0 = ‘0’
OTP Area Permanently
Locked
bit 1 = ‘0’
Protection Register PR0
Bank Address + 81
Bank Address + 84
Unique Device Number
Bank Address + 85
Bank Address + 88
OTP Area
Protection Register PR1 through PR16 Lock
Bank Address + 89
PRLD
Protection Registers PR1-PR16
Bank Address + 8A
Bank Address + 109
OTP Area
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LT128GSB | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GS | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5F | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
| M58LT128GST1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128HSB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
| M58LT128HSB8ZA6 | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays |
| M58LT128HSB8ZA6E | 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
發(fā)布緊急采購，3分鐘左右您將得到回復。