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參數(shù)資料
| 型號： | M57955L |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HYBRID IC FOR DRIVING HIGH BETA TRANSISTOR MODULES |
| 中文描述： | 混合集成電路高貝塔駕駛晶體管模塊 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 32K |
| 代理商： | M57955L |
Feb.1999
MITSUBISHI HYBRID ICs
M57955L
HYBRID IC FOR DRIVING HIGH BETA TRANSISTOR MODULES
PERFORMANCE CURVES
“H” OUTPUT CURRENT VS.
“H” LIMITING RESISTOR (TYPICAL)
“L” OUTPUT CURRENT VS.
“L” LIMITING RESISTOR (TYPICAL)
P
t
P
μ
s
P
t
P
μ
s
INPUT SIGNAL VOLTAGE
V
I
(V)
AMBIENT TEMPERATURE
T
a
(
°
C)
“
I
O
(
B
)
“L” LIMITING RESISTOR
R
ext2
(
)
“H” LIMITING RESISTOR
R
ext1
(
)
PROPAGATION DELAY TIME VS.
INPUT SIGNAL VOLTAGE (TYPICAL)
PROPAGATION DELAY TIME VS.
AMBIENT TEMPERATURE (TYPICAL)
INTERNAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
(MAXIMUM RATING)
AMBIENT TEMPERATURE
T
a
(
°
C)
I
P
D
“
I
O
(
B
)
P
t
P
μ
s
P
t
P
μ
s
1.0
00
0.9
0.2
0.2
0.6
0.8
0.4
0.6
0.8
0.4
V
CC
=8V, V
IN
=5V
R
ext1
=36
load:QM50DY-HB
T
a
=25°C
14
03
7
4
4
8
12
5
6
V
CC
=8V
R
ext1
=36
, R
ext2
=0.2
load:QM50DY-HB
f=2kHz, D.F.=50%
t
PHL
t
PLH
1.0
00
100
20
40
60
80
0.5
10
00
100
20
2
40
60
80
4
6
8
V
CC
=8V
R
ext1
=36
, R
ext2
=0.2
t
PLH
:0 4V
t
PHL
:5 0V
load:QM50DY-HB
f=2kHz, D.F.=50%
t
PHL
t
PLH
120
20
32
50
36
40
44
48
60
80
100
40
V
CC
=8V, V
IN
=5V
R
ext2
=0.2
load:QM50DY-HB
T
a
=25°C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| M57957L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HYBRID IC FOR DRIVING IGBT MODULES |
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| M57959L | 功能描述:IC GATE DRVR FOR IGBT MOD RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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