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參數(shù)資料
| 型號(hào)： | M57958L |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HYBRID IC FOR DRIVING IGBT MODULES |
| 中文描述： | 混合集成電路驅(qū)動(dòng)IGBT模塊 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 31K |
| 代理商： | M57958L |
Sep.1998
Hybrid Integrated Circuit
For Driving IGBT Modules
Description:
M57958L is a hybrid integrated
circuit designed for driving n-channel
IGBT modules in any gate amplifier
application. This device operates
as an isolation amplifier for these
modules and provides the required
electrical isolation between the in-
put and output with an opto-cou-
pler.
Features:
u
Built in high CMRR opto-
coupler (V
CMR
: Typical
30kV/
μ
s, Min. 15kV/
μ
s)
u
Electrical Isolation between in-
put and output with opto-cou-
plers (V
iso
= 2500,
V
RMS
for 1 min.)
u
TTL compatible input interface
u
Two supply drive topology
u
Short differential of propa-
gation time (t
PLH
, t
PHL
to Max.
1.5
μ
s, Typical 1.0
μ
s)
Application:
To drive IGBT modules for inverter,
AC Servo systems, UPS, CVCF in-
verter, and welding applications.
Recommended Modules:
V
CES
= 600V Series
(up to 400A Class)
V
CES
= 1200V Series
(up to 200A Class)
V
CES
= 1400V Series
(up to 200A Class)
Precaution:
The value of “R
ext
” should be selected according to the guidelines in
Section 4.6.2 of Application Notes.
Also, the value of “R
ext
” should be selected so that maximum limits, I
OHP
and I
OLP
are not exceeded.
Block Diagram
Dimensions in mm
10.0 MAX
Test Circuit
V
IN
V
OUT
0
t
r
t
f
90%
10%
t
PLH
t
PHL
Outline Drawing
51.3 MAX
15.5 MAX
2.54
±
0.1
0.55
±
0.1
2.54
×
7 =
17.78
±
0.2
1.8 MAX
29 MAX
4.5
±
1.5
8.5 MAX
10.0 MAX
0.35
±
0.2
8
1
M57958L
19 MAX
1
V
IN
47
μ
F
2
5
6
7
8
TTL, etc.
V
= 15V
V
= 10V
R
ext
C
ext
= 47
μ
F
18V
M57958L
MEASUREMENT
16mA
2
1
8
7
6
5
185
MITSUBISHI HYBRID ICs
M57958L
HYBRID IC FOR DRIVING IGBT MODULES
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|---|---|
| M57959 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HYBRID IC FOR DRIVING IGBT MODULES |
| M57959AL-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT MODULE GATE HYBRID IC |
| M57959L | 功能描述:IC GATE DRVR FOR IGBT MOD RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| M57962 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HYBRID IC FOR DRIVING IGBT MODULES |
| M57962AL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:LGBT IC |
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