參數(shù)資料
型號(hào)： M470T6464EHS-LF7
元件分類： DRAM
英文描述： DDR DRAM MODULE, ZMA200
封裝： ROHS COMPLIANT, SODIMM-200
文件頁(yè)數(shù)： 12/22頁(yè)
文件大?。?/td> 401K
代理商： M470T6464EHS-LF7
Rev. 1.0 August 2008
SODIMM
DDR2 SDRAM
2 of 22
1.0 DDR2 Unbuffered SODIMM Ordering Information .....................................................................4
2.0 Features .........................................................................................................................................4
3.0 Address Configuration .................................................................................................................4
4.0 Pin Configurations (Front side/Back side) .................................................................................5
5.0 Pin Description .............................................................................................................................5
6.0 Input/Output Function Description .............................................................................................6
7.0 Functional Block Diagram : .........................................................................................................7
7.1 2GB, 256Mx64 Module - M470T5663EH3
...........................................................................................7
7.2 1GB, 128Mx64 Module - M470T2864EH3
...........................................................................................8
7.3 1GB, 128Mx64 Module - M470T2863EH3
...........................................................................................9
7.4 512MB, 64Mx64 Module - M470T6464EHS
....................................................................................... 10
8.0 Absolute Maximum DC Ratings ................................................................................................11
9.0 AC & DC Operating Conditions................................................................................................. 11
9.1 Recommended DC Operating Conditions (SSTL - 1.8)
..................................................................... 11
9.2 Operating Temperature Condition
.................................................................................................12
9.3 Input DC Logic Level
...................................................................................................................12
9.4 Input AC Logic Level
...................................................................................................................12
9.5 AC Input Test Conditions
.............................................................................................................12
10.0 IDD Specification Parameters Definition ................................................................................13
11.0 Operating Current Table : ........................................................................................................14
11.1 M470T5663EH3 : 256Mx64 2GB Module
........................................................................................14
11.2 M470T2864EH3 : 128Mx64 1GB Module
........................................................................................14
11.3 M470T2863EH3: 128Mx64 1GB Module
.........................................................................................15
11.4 M470T6464EHS: 64Mx64 512MB Module
.......................................................................................15
12.0 Input/Output Capacitance ........................................................................................................16
13.0 Electrical Characteristics & AC Timing for DDR2-800/667 ...................................................16
13.1 Refresh Parameters by Device Density
.........................................................................................16
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
..............................................16
13.3 Timing Parameters by Speed Grade
.............................................................................................17
14.0 Physical Dimensions : .............................................................................................................19
14.1 128Mbx8 based 256Mx64 Module (2 Rank)
....................................................................................19
14.2 64Mbx16 based 128Mx64 Module (2 Rank)
.................................................................................... 20
14.3 128Mbx8 based 128Mx64 Module (1 Rank)
................................................................................... 21
14.4 64Mbx16 based 64Mx64 Module (1 Rank)
..................................................................................... 22
Table of Contents
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M470T6464QZH3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 SDRAM Memory
M470T6554BG0-CD5/CC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
M470T6554BG3-CD5/CC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
M470T6554BGZ0-CD5/CC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
M470T6554BGZ3-CD5/CC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
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