參數(shù)資料
型號(hào): M464S3354BTS-C7A
元件分類: DRAM
英文描述: 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144
封裝: SODIMM-144
文件頁(yè)數(shù): 14/15頁(yè)
文件大?。?/td> 277K
代理商: M464S3354BTS-C7A
256MB, 512MB Unbuffered SODIMM
Rev. 1.2 March 2004
SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.0 * # of component
W
Short circuit current
IOS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD
3.0
3.3
3.6
V
Input high voltage
VIH
2.0
3.0
VDDQ+0.3
V
1
Input low voltage
VIL
-0.3
0
0.8
V
2
Output high voltage
VOH
2.4
-
V
IOH = -2mA
Output low voltage
VOL
--
0.4
V
IOL = 2mA
Input leakage current
ILI
-10
-
10
uA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Parameter
Symbol
M464S3354BTS
M464S6454BTS
Unit
Min
Max
Min
Max
Input capacitance (A0 ~ A12, BA0 ~ BA1)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0 ~ CKE1)
Input capacitance (CLK0 ~ CLK1)
Input capacitance (CS0 ~ CS1)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
COUT
15
10
25
21
25
12
25
15
10
45
25
21
25
12
pF
1. VIH (max) = 5.6V AC.The overshoot voltage duration is
≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is
≤ 3ns.
3. Any input 0V
≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
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