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參數(shù)資料
| 型號(hào)： | M45PE10-VMP6P |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 33/34頁 |
| 文件大小： | 454K |
| 代理商： | M45PE10-VMP6P |
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M45PE10
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Status Register
The Status Register contains two status bits that
can be read by the Read Status Register (RDSR)
instruction.
WIP bit. The Write In Progress (WIP) bit indicates
whether the memory is busy with a Write, Program
or Erase cycle.
WEL bit. The Write Enable Latch (WEL) bit indi-
cates the status of the internal Write Enable Latch.
Table 2. Status Register Format
Note: WEL and WIP are volatile read-only bits (WEL is set and re-
set by specific instructions; WIP is automatically set and re-
set by the internal logic of the device).
Protection Modes
The environments where non-volatile memory de-
vices are used can be very noisy. No SPI device
can operate correctly in the presence of excessive
noise. To help combat this, the M45PE10 features
the following data protection mechanisms:
■
Power On Reset and an internal timer (tPUW)
can provide protection against inadvertant
changes while the power supply is outside the
operating specification.
■
Program, Erase and Write instructions are
checked that they consist of a number of clock
pulses that is a multiple of eight, before they
are accepted for execution.
■
All instructions that modify data must be
preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch
(WEL) bit. This bit is returned to its reset state
by the following events:
–
Power-up
–
Reset (RESET) driven Low
–
Write Disable (WRDI) instruction
completion
–
Page Write (PW) instruction completion
–
Page Program (PP) instruction completion
–
Page Erase (PE) instruction completion
–
Sector Erase (SE) instruction completion
■
The Hardware Protected mode is entered
when Write Protect (W) is driven Low, causing
the first 256 pages of memory to become
read-only. When Write Protect (W) is driven
High, the first 256 pages of memory behave
like the other pages of memory
■
The Reset (Reset) signal can be driven Low to
protect the contents of the memory during any
critical time, not just during Power-up and
Power-down.
■
In addition to the low power consumption
feature, the Deep Power-down mode offers
extra software protection from inadvertant
Write, Program and Erase instructions while
the device is not in active use.
b7
b0
0
WEL
WIP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M45PE10-VMP6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M464S3354BTS-C7A | 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| M470T5663EH3-CF7 | DDR DRAM MODULE, ZMA200 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M45PE10-VMP6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface |
| M45PE10-VMP6TG | 功能描述:閃存 1 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M45PE10-VMP6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface |
| M45PE10-VMS6G | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M45PE16 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface |
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