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參數(shù)資料
| 型號(hào)： | M40SZ100WMQ |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 5V or 3V NVRAM SUPERVISOR FOR LPSRAM |
| 中文描述： | 5V或3V的LPSRAM NVRAM中督導(dǎo)員 |
| 文件頁(yè)數(shù)： | 17/19頁(yè) |
| 文件大?。?/td> | 285K |
| 代理商： | M40SZ100WMQ |
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M40SZ100Y, M40SZ100W
Table 5. DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: TA = –40 to 85°C; VCC = 2.7 to 3.6V or 4.5 to 5.5V(except where noted).
2. Measured with VOUT and ECON open.
3. RSTIN internally pulled-up to VCC through 100k resistor.
4. Outputs deselected.
5. External SRAM must match SUPERVISOR chip VCC specification (3V or 5V).
6. For rechargeable back-up, VBAT (max) may be considered VCC – 0.5V.
7. For PFO pin (CMOS).
8. Chip Enable output (ECON) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage currents will re-
duce battery life.
9. For RST & BL pins (Open Drain).
Sym
Parameter
Test Condition(1)
M40SZ100Y
M40SZ100W
Unit
Min
Typ
Max
Min
Typ
Max
ICC
Supply Current
Outputs open
1
0.5
mA
ICCDR
Data Retention Mode
Current(2)
50
200
50
200
nA
ILI
(3)
Input Leakage
Current
0V
≤ VIN ≤ VCC
±1
A
Input Leakage
Current (PFI)
–25
2
25
–25
2
25
nA
ILO
(4)
Output Leakage
Current
0V
≤ VOUT ≤ VCC
±1
A
IOUT1
(5)
VOUT Current
(Active)
VOUT > VCC – 0.3
175
100
mA
IOUT2
VOUT Current
(Battery Back-up)
VOUT > VBAT – 0.3
100
A
VBAT
Battery Voltage
2.5
3.0
3.5(6)
2.5
3.0
3.5(6)
V
VIH
Input High Voltage
0.7VCC
VCC + 0.3 0.7VCC
VCC + 0.3
V
VIL
Input Low Voltage
–0.3
0.3VCC
–0.3
0.3VCC
V
VOH
Output High
Voltage(7)
IOH = –1.0mA
2.4
V
VOHB
VOH Battery Back-
up(8)
IOUT2 = –1.0A
2.5
2.9
3.5
2.5
2.9
3.5
V
VOL
Output Low Voltage
IOL = 3.0mA
0.4
V
Output Low Voltage
(open drain)(9)
IOL = 10mA
0.4
V
VPFD
Power-fail Deselect
Voltage
4.20
4.40
4.50
2.55
2.60
2.70
V
VPFI
PFI Input Threshold
VCC = 5V(Y)
VCC = 3V(V)
1.225
1.250
1.275
1.225
1.250
1.275
V
PFI Hysteresis
PFI Rising
20
70
20
70
mV
VSO
Battery Back-up
Switchover Voltage
2.5
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M40SZ100WMQ6 | 功能描述:監(jiān)控電路 Single Low Pwr SRAM RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過(guò)電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開(kāi)關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| M40SZ100WMQ6E | 功能描述:監(jiān)控電路 Single Low Pwr SRAM RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過(guò)電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開(kāi)關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| M40SZ100WMQ6ETR | 制造商:STMicroelectronics 功能描述:PROCESSOR SUPERVISOR 500UA 16SOIC - Bulk |
| M40SZ100WMQ6F | 功能描述:監(jiān)控電路 Single Low Pwr SRAM RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過(guò)電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開(kāi)關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| M40SZ100WMQ6FTR | 制造商:STMicroelectronics 功能描述:PROCESSOR SUPERVISOR 500UA 16SOIC - Tape and Reel |
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