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參數(shù)資料
| 型號： | M368L3223ETN |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Unbuffered Module |
| 中文描述： | DDR SDRAM的緩沖模塊 |
| 文件頁數(shù)： | 16/22頁 |
| 文件大小： | 377K |
| 代理商： | M368L3223ETN |
DDR SDRAM
256MB, 512MB Unbuffered DIMM
Rev. 1.1 August. 2003
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Ordering Information
Operating Frequencies
Part Number
Density
Organization
Component Composition
Height
M368L3223ETN-C(L)B3/AA/A2/B0
256MB
32M x 64
32Mx8 (K4H560838E) * 8EA
1,250mil
M381L3223ETM-C(L)B3/AA/A2/B0
256MB
32M x 72
32Mx8 (K4H560838E) * 9EA
1,250mil
M368L6423ETN-C(L)B3/AA/A2/B0
512MB
64M x 64
32Mx8 (K4H560838E) * 16EA
1,250mil
M381L6423ETM-C(L)B3/AA/A2/B0
512MB
64M x 72
32Mx8 (K4H560838E) * 18EA
1,250mil
B3(DDR333@CL=2.5)
AA(DDR266@CL=2)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
Speed @CL2
133MHz
100MHz
Speed @CL2.5
166MHz
133MHz
CL-tRCD-tRP
2.5-3-3
2-2-2
2-3-3
2.5-3-3
Feature
Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency 2, 2.5 (clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
PCB : Height 1,250 (mil), single (256MB), double (512MB) sided
184Pin Unbuffered DIMM based on 256Mb E-die (x8,)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M368L3324BT | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L3324BTM-CB3 | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L3324BTM-CCC | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L3324BTM-LB3 | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L3324BTM-LCC | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M368L3223ETN-A2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
| M368L3223ETN-AA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
| M368L3223ETN-B0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
| M368L3223ETN-CB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
| M368L3223ETN-CLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
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