參數(shù)資料
型號： M312L6420EUS-CA2
元件分類： DRAM
英文描述： 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
封裝： ROHS COMPLIANT, DIMM-184
文件頁數(shù)： 6/30頁
文件大?。?/td> 712K
代理商： M312L6420EUS-CA2
DDR SDRAM
256MB, 512MB, 1GB Registered DIMM
Rev. 1.0 July 2005
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD supply relative to Vss
VDD,VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.5 * # of component
W
Short circuit current
IOS
50
mA
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70
°C)
Note :
1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may
not exceed +/-2% of the dc value.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track
variations in the DC level of VREF.
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range,
for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers
due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to
source voltages from 0.1 to 1.0.
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333)
VDD
2.3
2.7
V
Supply voltage(for device with a nominal VDD of 2.6V for DDR400)
VDD
2.5
2.7
V
I/O Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333)
VDDQ
2.3
2.7
V
I/O Supply voltage(for device with a nominal VDD of 2.6V for DDR400)
VDDQ
2.5
2.7
V
I/O Reference voltage
VREF
0.49*VDDQ
0.51*VDDQ
V
1
I/O Termination voltage(system)
VTT
VREF-0.04
VREF+0.04
V2
Input logic high voltage
VIH(DC)
VREF+0.15
VDDQ+0.3
V
Input logic low voltage
VIL(DC)
-0.3
VREF-0.15
V
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
VDDQ+0.3
V
Input Differential Voltage, CK and CK inputs
VID(DC)
0.36
VDDQ+0.6
V
3
V-I Matching: Pullup to Pulldown Current Ratio
VI(Ratio)
0.71
1.4
-
4
Input leakage current
II
-2
2
uA
Output leakage current
IOZ
-5
5
uA
Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V
IOH
-16.8
mA
Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V
IOL
16.8
mA
Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V
IOH
-9
mA
Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V
IOL
9mA
8.0 Power & DC Operating Conditions (SSTL_2 In/Out)
7.0 Absolute Maximum Ratings
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