參數(shù)資料
型號: M2V64S2DTP-6
廠商: Mitsubishi Electric Corporation
英文描述: 64M Synchronous DRAM
中文描述: 6400同步DRAM
文件頁數(shù): 22/51頁
文件大?。?/td> 430K
代理商: M2V64S2DTP-6
Feb.'00
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.3.2)
64M Synchronous DRAM
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x 4-BIT)
(4-BANK x 2,097,152-WORD x 8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
22
[ Read Interrupted by Burst Terminate ]
Similarly to the precharge, a burst terminate command can interrupt the burst read operation and
disable the data output. The terminated bank remains active. READ to TBST interval is minimum 1
CLK. A TBST command to output disable latency is equivalent to the /CAS Latency.
CLK
Command
DQ
TBST
READ
Q0
Q1
Q2
Command
DQ
TBST
READ
Q0
Q1
Command
DQ
TBST
READ
Q0
Command
DQ
TBST
READ
Q0
Q1
Q2
Command
DQ
TBST
READ
Q0
Q1
Command
DQ
TBST
READ
Q0
CL=2
CL=3
Read interrupted by Terminate (BL=4)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M2V64S2DTP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM
M2V64S2DTP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM
M2V64S30BTP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM
M2V64S30BTP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM
M2V64S30BTP-10L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM