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參數(shù)資料
| 型號(hào)： | M2S56D30AKT-75 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 32M X 8 DDR DRAM, 0.75 ns, PDSO64 |
| 封裝： | 0.40 MM PITCH, STSOP-64 |
| 文件頁(yè)數(shù)： | 4/41頁(yè) |
| 文件大?。?/td> | 638K |
| 代理商： | M2S56D30AKT-75 |
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12
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
256M Double Data Rate Synchronous DRAM
M2S56D20/ 30/ 40AKT
FUNCTION TRUTH TABLE (4/4)
ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No Operation
NOTES:
1. All entries are valid only when CKE was High during the preceding clock cycle and the current clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the
state of specific bank.
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
6. Refer to Read with Auto-Precharge in page 28.
7. Refer to Write with Auto-Precharge in page 30.
ILLEGAL = Device operation and/or data-integrity are not guaranteed.
Current State /CS /RAS /CAS /WE Address
Command
Action
Notes
REFRESHING H
X
X X
DESEL
NOP (Idle after tRFC)
L
H
H X
NOP
NOP (Idle after tRFC)
LH
H
L
BA
TERM
ILLEGAL
L
H
L
X BA, CA, A10
READ / WRITE
ILLEGAL
L
H
H BA, RA
ACT
ILLEGAL
L
H
L
BA, A10
PRE / PREA
ILLEGAL
LL
L
H X
REFA
ILLEGAL
LL
L
Op-Code,
Mode-Add
MRS
ILLEGAL
H
X
X X
DESEL
NOP (Idle after tMRD)
L
H
H X
NOP
NOP (Idle after tMRD)
LH
H
L
BA
TERM
ILLEGAL
L
H
L
X BA, CA, A10
READ / WRITE
ILLEGAL
L
H
H BA, RA
ACT
ILLEGAL
L
H
L
BA, A10
PRE / PREA
ILLEGAL
LL
L
H X
REFA
ILLEGAL
LL
L
Op-Code,
Mode-Add
MRS
ILLEGAL
MODE
REGISTER
SETTING
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M2S56D30AKT-75A | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30AKT-75AL | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30AKT-75L | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30ATP | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30ATP-10 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
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