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參數(shù)資料
| 型號： | M29KW016E100M1T |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 1M X 16 FLASH 12V PROM, 100 ns, PDSO44 |
| 封裝： | 0.525 INCH, PLASTIC, SO-44 |
| 文件頁數(shù)： | 29/33頁 |
| 文件大?。?/td> | 705K |
| 代理商： | M29KW016E100M1T |
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M29KW016E
SUMMARY DESCRIPTION
The M29KW016E LightFlash is a 16 Mbit (1Mb
x16) non-volatile memory that can be read, erased
and reprogrammed. Read operations can be per-
formed using a single low voltage (2.7 to 3.6V)
supply. Program and Erase operations require an
additional VPP (11.4 to 12.6) power supply. On
power-up the memory defaults to its Read mode
where it can be read in the same way as a ROM or
EPROM.
The memory is divided into 8 uniform blocks that
can be erased independently so it is possible to
preserve valid data while old data is erased (see
Table 2., Block Addresses). Program and Erase
commands are written to the Command Interface
of the memory. An on-chip Program/Erase Con-
troller (P/E.C.) simplifies the process of program-
ming or erasing the memory by taking care of all of
the special operations that are required to update
the memory contents.
The M29KW016E LightFlash features a new
command, Multiple Word Program, used to pro-
gram large streams of data. It greatly reduces the
total programming time when a large number of
Words are written to the memory at any one time.
Using this command the entire memory can be
programmed in 2s, compared to 9s using the stan-
dard Word Program.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in SO44, TSOP48 (12 x
20mm) and TFBGA48 (6 x 9mm, 0.8mm pitch)
packages. The memory is supplied with all the bits
erased (set to ’1’).
Figure 2. Logic Diagram
Note: RB not available on SO44 package.
Table 1. Signal Names
A0-A19
Address Inputs
DQ0-DQ15
Data Inputs/Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset
RB
Ready/Busy Output
(not available on SO44 package)
VCC
Supply Voltage read
VPP
Supply Voltage program erase
VSS
Ground
NC
Not Connected Internally
AI04371
20
A0-A19
DQ0-DQ15
VCC
M29KW016E
E
VSS
16
G
RP
VPP
RB
W
相關(guān)PDF資料 |
PDF描述 |
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| M31012ABMNFREQ | VCXO, CLOCK, 150 MHz - 1400 MHz, CMOS OUTPUT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29KW016E110M1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Uniform Block) 3V Supply LightFlash Memory |
| M29KW016E110N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Uniform Block) 3V Supply LightFlash Memory |
| M29KW016E110N6 | 功能描述:閃存 16M (1Mx16) 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29KW016E110ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Uniform Block) 3V Supply LightFlash Memory |
| M29KW016E90M1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Uniform Block) 3V Supply LightFlash Memory |
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